<abstract xmlns="http://www.w3.org/1999/xhtml">

This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is used for enhancing the bandwidth. The proposed structure operates at a data rate of 10 Gb/s with a BER of Iff20 and was implemented in a 0.35 μm CMOS process.
The integrated photodiode has a capacitance of 0.01 pF which permits to the structure to achieve a wide bandwidth (5.75 GHz) with only one inductor before the last stage; hence a smaller silicon area is maintained. The proposed TIA has a gain of36.56 dBΩ (67.57 KΩ), and an input courant noise level of about 25.8 pA/Hz0.5. It consumes a DC power of 87.4 mW from 3.3 V supply voltage.
</abstract>

This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is used for enhancing the bandwidth. The proposed structure operates at a data rate of 10 Gb/s with a BER of Iff20 and was implemented in a 0.35 μm CMOS process.
The integrated photodiode has a capacitance of 0.01 pF which permits to the structure to achieve a wide bandwidth (5.75 GHz) with only one inductor before the last stage; hence a smaller silicon area is maintained. The proposed TIA has a gain of36.56 dBΩ (67.57 KΩ), and an input courant noise level of about 25.8 pA/Hz0.5. It consumes a DC power of 87.4 mW from 3.3 V supply voltage.

0.35 μm CMOS Optical Sensor for an Integrated Transimpedance Circuit

Houari Boumediene University of Sciences and Technology

International Journal on Smart Sensing and Intelligent Systems

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

{"article-title":"0.35 μm CMOS Optical Sensor for an Integrated Transimpedance Circuit"}

This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is...

0.35 μm CMOS Optical Sensor for an Integrated Transimpedance Circuit

Data publikacji: 01 wrz 2011

Zakres stron: 467 - 481

Otrzymano: 05 lip 2011

Przyjęty: 18 sie 2011

DOI: https://doi.org/10.21307/ijssis-2017-451

© 2011 H. Escid et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.