Hydrogen Gas Sensing Performance Of Pt/Sno2 Nanowires/Sic Mos Devices
, , , , , , oraz | 13 gru 2017
O artykule
Data publikacji: 13 gru 2017
Zakres stron: 771 - 783
DOI: https://doi.org/10.21307/ijssis-2017-319
Słowa kluczowe
© 2008 M. Shafiei et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
This paper presents material and gas sensing properties of Pt/SnO2 nanowires/SiC metal oxide semiconductor devices towards hydrogen. The SnO2 nanowires were deposited onto the SiC substrates by vapor-liquid-solid growth mechanism. The material properties of the sensors were investigated using scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The current-voltage characteristics have been analyzed. The effective change in the barrier height for 1% hydrogen was found to be 142.91 meV. The dynamic response of the sensors towards hydrogen at different temperatures has also been studied. At 530°C, voltage shift of 310 mV for 1% hydrogen was observed