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Fig. 1
Depth profiles of Si, O, N and H in an ON structure annealed at 700 °C.
Fig. 2
SIMS depth distribution of oxygen concentration for samples annealed at different temperatures.
Fig. 3
SIMS depth distributions of Si/N ratio on ON structure for as-deposited and annealed at: 500 °C, 700 °C, 900 °C and 1000 °C.
Fig. 4
SIMS depth distributions of O/N ratio for as deposited and annealed films at temperatures 500 °C, 700 °C, 900 °C and 1000 °C.
Fig. 5
Typical RBS spectrum of ON structure recorded with He+2 ions at 2 MeV. Simulation by SIMNRA is given for comparison. Chemical symbol arrows are given to show the signal of each element located at the film surface.
Fig. 6
First derivative AES survey spectrum of oxide/nitride film obtained after dry oxidation of SiNx and annealed at 700 °C during 30 min.
Fig. 7
The EDX spectrum of a typical oxide/nitride film with similar amounts of nitrogen and oxygen. Electron beam energy: 5 keV and the detection take-off angle 35°.
Fig. 8
Correlation between O/Si and N/Si with annealing temperature determined by EDX in oxide/nitride film oxidized at 950 °C during 3 hours. The SiNx films were deposited by PECVD with R = 6.