Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various temperatures in aging domain with the use of the commercially available Materials Studio v.6. software. The results showed that the intermetallic compound (IMC) growth followed the parabolic law, which indicated this growth to be mainly controlled by volume diffusion. The growth activation energy was estimated at 7.48 kJ · mol^-1.

Język:: Angielski

Częstotliwość wydawania:: 4 razy w roku
Dziedziny czasopisma:: Nauka o materiałach, Nauka o materiałach, inne, Nanomateriały, Funkcjonalne i inteligentne materiały, Charakterystyka i właściwości materiałów

Kanał RSS czasopisma

Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

Tomasz Falat

Bartosz Platek

Data publikacji: 11 lip 2015

Zakres stron: 445 - 450

Otrzymano: 30 sty 2014

Przyjęty: 27 lut 2015

DOI: https://doi.org/10.1515/msp-2015-0054

Słowa kluczowethermal interface material (TIM), molecular dynamics simulations (MD), diffusivity, intermetallic compound (IMC)

© 2015

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Słowa kluczowe
thermal interface material (TIM), molecular dynamics simulations (MD), diffusivity, intermetallic compound (IMC)