[1. O. Muscato, W. Wagner, and V. Di Stefano, Numerical study of the systematic error in Monte Carlo schemes for semiconductors, ESAIM: M2AN, vol. 44, no. 5, pp. 1049-1068, 2010.]Search in Google Scholar
[2. O. Muscato, W. Wagner, and V. Di Stefano, Properties of the steady state distribution of electrons in semiconductors, Kinetic and Related Models, vol. 4, no. 3, pp. 809-829, 2011.10.3934/krm.2011.4.809]Search in Google Scholar
[3. O. Muscato, V. Di Stefano, and W. Wagner, A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation, Comput. Math. with Appl., vol. 65, no. 3, pp. 520-527, 2013.10.1016/j.camwa.2012.03.100]Search in Google Scholar
[4. T. Sadi, R. Kelsall, N. Pilgrim, J.-L. Thobel, and F. Dessene, Monte carlo study of self-heating in nanoscale devices, J. Comp. Electr., vol. 11, no. 1, pp. 118-128, 2012.10.1007/s10825-012-0395-x]Search in Google Scholar
[5. O. Muscato and W. Wagner, A class of stochastic algorithms for the wigner equation, SIAM J. Sci. Comput., vol. 38, no. 3, pp. A1438- A1507, 2016.10.1137/16M105798X]Search in Google Scholar
[6. A. Majorana, G. Mascali, and V. Romano, Charge transport and mobility in monolayer graphene, J. Math. Industry, vol. 7, p. 4, 2017.10.1186/s13362-016-0027-3]Search in Google Scholar
[7. G. Lebon, D. Jou, and J. Casas-Vázquez, Understanding Non- equilibrium Thermodynamics. Springer-Verlag, 2008.10.1007/978-3-540-74252-4]Search in Google Scholar
[8. I. Mueller and T. Ruggeri, Rational Extended Thermodynamics. Springer-Verlag, 1998.10.1007/978-1-4612-2210-1]Search in Google Scholar
[9. O. Muscato and V. D. Stefano, Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model, SIAM J. APPL. MATH., vol. 75, no. 4, pp. 1941-1964, 2015.]Search in Google Scholar
[10. A. Jüngel, Energy transport in semiconductor devices, Math. Comput. Model. Dyn. Syst., vol. 16, pp. 1-22, 2010.10.1080/13873951003679017]Search in Google Scholar
[11. G. Pennington and N. Goldsman, Consistent calculation for n-type hexagonal SiC inversion layers, J. Appl. Phys., vol. 95, no. 9, pp. 4223- 4234, 2004.]Search in Google Scholar
[12. J. Ziman, Electrons and Phonons. Claredon Press, 1967.]Search in Google Scholar
[13. O. Muscato and V. Di Stefano, Hydrodynamic modeling of the electrothermal transport in silicon semiconductors, J. Phys. A: Math. Theor., vol. 44, no. 10, p. 105501, 2011.]Search in Google Scholar
[14. O. Muscato and V. Di Stefano, An energy transport model describing heat generation and conduction in silicon semiconductors, J. Stat. Phys., vol. 144, no. 1, pp. 171-197, 2011.10.1007/s10955-011-0247-2]Search in Google Scholar
[15. O. Muscato and V. Di Stefano, Local equilibrium and off-equilibrium thermoelectric effects in silicon semiconductors, J. Appl. Phys., vol. 110, no. 9, p. 093706, 2011.]Search in Google Scholar
[16. O. Muscato and V. Di Stefano, Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations, COMPEL, vol. 30, no. 2, pp. 519-537, 2011.10.1108/03321641111101050]Search in Google Scholar
[17. V. Di Stefano and O. Muscato, Seebeck effect in silicon semiconductors, Acta Appl. Math., vol. 122, no. 1, pp. 225-238, 2012.10.1007/s10440-012-9739-6]Search in Google Scholar
[18. O. Muscato and V. Di Stefano, Electro-thermal behaviour of a submicron silicon diode, Semicond. Sci. Tech., vol. 28, no. 2, p. 025021, 2013.]Search in Google Scholar
[19. G. Mascali, A hydrodynamical model for silicon semiconductors including crystal heating, Europ. J. Appl. Math., vol. 26, pp. 477-496, 2015.10.1017/S0956792515000157]Search in Google Scholar
[20. G. Mascali, A new formula for silicon thermal conductivity based on a hierarchy of hydrodynamical models, J. Stat. Phys., vol. 163, no. 5, pp. 1268-1284, 2016.]Search in Google Scholar
[21. O. Muscato and V. Di Stefano, Hydrodynamic modeling of silicon quantum wires, J. Comput. Electron., vol. 11, no. 1, pp. 45-55, 2012.10.1007/s10825-012-0381-3]Search in Google Scholar
[22. O. Muscato and V. Di Stefano, Hydrodynamic simulation of a n+ - n - n+ silicon nanowire, Contin. Mech. Thermodyn., vol. 26, pp. 197-205, 2014.10.1007/s00161-013-0296-7]Search in Google Scholar
[23. O. Muscato and T. Castiglione, Electron transport in silicon nanowires having different cross-sections, Comm. Appl. Ind. Math., vol. 7, no. 2, pp. 8-25, 2016.10.1515/caim-2016-0003]Search in Google Scholar
[24. O. Muscato and T. Castiglione, A hydrodynamic model for silicon nanowires based on the maximum entropy principle, Entropy, vol. 18, no. 10, p. 368, 2016.10.3390/e18100368]Search in Google Scholar
[25. M. Coco, G. Mascali, and V. Romano, Monte Carlo analysis of the thermal effects in monolayer graphene, J. Comp. Theor. Transp., vol. 45, no. 7, pp. 540-553, 2016.10.1080/23324309.2016.1211537]Search in Google Scholar
[26. M. Lundstrom, Fundamentals of Carrier Transport. Cambridge University Press, 2000.10.1017/CBO9780511618611]Search in Google Scholar
[27. M. Roschke and F. Schwierz, Electron mobility models for 4H, 6H, and 3C SiC, IEEE Trans. Elec. Dev., vol. 48, no. 7, pp. 1442-1447, 2001.]Search in Google Scholar