Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors
, , , e
14 dic 2023
INFORMAZIONI SU QUESTO ARTICOLO
Pubblicato online: 14 dic 2023
Pagine: 503 - 512
Ricevuto: 02 ott 2023
DOI: https://doi.org/10.2478/jee-2023-0058
Parole chiave
© 2023 Reza Abbasnezhad et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Abbasnezhad, Reza
Department of Electrical Engineering, Shabestar Branch, Islamic Azad UniversityShabestar, Iran
Saghai, Hassan Rasooli
Department of Electrical Engineering, Tabriz Branch, Islamic Azad UniversityTabriz, Iran
Hosseini, Reza
Department of Electrical Engineering, Khoy Branch, Islamic Azad UniversityKhoy, Iran
Sedghi, Aliasghar
Department of Physics, Shabestar Branch, Islamic Azad UniversityShabestar, Iran
Vahedi, Ali
Department of Physics, Tabriz Branch, Islamic Azad UniversityTabriz, Iran