Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors
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Dec 14, 2023
About this article
Published Online: Dec 14, 2023
Page range: 503 - 512
Received: Oct 02, 2023
DOI: https://doi.org/10.2478/jee-2023-0058
Keywords
© 2023 Reza Abbasnezhad et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Abbasnezhad, Reza
Department of Electrical Engineering, Shabestar Branch, Islamic Azad UniversityShabestar, Iran
Saghai, Hassan Rasooli
Department of Electrical Engineering, Tabriz Branch, Islamic Azad UniversityTabriz, Iran
Hosseini, Reza
Department of Electrical Engineering, Khoy Branch, Islamic Azad UniversityKhoy, Iran
Sedghi, Aliasghar
Department of Physics, Shabestar Branch, Islamic Azad UniversityShabestar, Iran
Vahedi, Ali
Department of Physics, Tabriz Branch, Islamic Azad UniversityTabriz, Iran