Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system
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02 nov 2018
INFORMAZIONI SU QUESTO ARTICOLO
Pubblicato online: 02 nov 2018
Pagine: 364 - 369
Ricevuto: 28 set 2016
Accettato: 22 mar 2018
DOI: https://doi.org/10.1515/msp-2018-0036
Parole chiave
© 2018 M. Abbas et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Abbas, M.
Department of Physics, COMSATS Institute of Information TechnologyIslamabad, Pakistan
Ripha International UniversityIslamabad, Pakistan
Shah, N. A.
Department of Physics, COMSATS Institute of Information TechnologyIslamabad, Pakistan
Jehangir, K.
Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Fareed, M.
Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Zaidi, A.
Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan