Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system
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02. Nov. 2018
Über diesen Artikel
Online veröffentlicht: 02. Nov. 2018
Seitenbereich: 364 - 369
Eingereicht: 28. Sept. 2016
Akzeptiert: 22. März 2018
DOI: https://doi.org/10.1515/msp-2018-0036
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© 2018 M. Abbas et al., published by Sciendo
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Abbas, M.
Department of Physics, COMSATS Institute of Information TechnologyIslamabad, Pakistan
Ripha International UniversityIslamabad, Pakistan
Shah, N. A.
Department of Physics, COMSATS Institute of Information TechnologyIslamabad, Pakistan
Jehangir, K.
Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Fareed, M.
Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Zaidi, A.
Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan