Local temperature rise during the electron beam characterization Calculation model for the Al_xGa_1-xN at low dimensions

Pubblicato online: 18 mag 2018

Pagine: 51 - 55

Ricevuto: 28 feb 2017

Accettato: 18 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0034

Parole chiave

semiconductors, aluminum gallium nitride (AlGaN), scanning electron microscope (SEM), thermal effects

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.