Local temperature rise during the electron beam characterization Calculation model for the Al_xGa_1-xN at low dimensions

Publicado en línea: 18 may 2018

Páginas: 51 - 55

Recibido: 28 feb 2017

Aceptado: 18 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0034

Palabras clave

semiconductors, aluminum gallium nitride (AlGaN), scanning electron microscope (SEM), thermal effects

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.