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Etching and ellipsometry studies on CL-VPE grown GaN epilayer

P. Puviarasu
P. Puviarasu
   | 24 feb 2017
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Pubblicato online: 24 feb 2017
Pagine: 135 - 139
Ricevuto: 06 mag 2015
Accettato: 05 gen 2017
DOI: https://doi.org/10.1515/msp-2017-0023
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© 2017 P. Puviarasu
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.

Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.

Refractive index of as-grown and high energy Si ion irradiated GaN.
Refractive index of as-grown and high energy Si ion irradiated GaN.

Effect of Si ion irradiation on the film thickness of the GaN layers.
Effect of Si ion irradiation on the film thickness of the GaN layers.

Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.
Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.
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Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
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