Accès libre

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

P. Puviarasu
P. Puviarasu
   | 24 févr. 2017
Materials Science-Poland's Cover Image
À propos de cet article
Article précédent
Article suivant
Citez
Publié en ligne: 24 févr. 2017
Pages: 135 - 139
Reçu: 06 mai 2015
Accepté: 05 janv. 2017
DOI: https://doi.org/10.1515/msp-2017-0023
Mots clés
© 2017 P. Puviarasu
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.

Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.

Refractive index of as-grown and high energy Si ion irradiated GaN.
Refractive index of as-grown and high energy Si ion irradiated GaN.

Effect of Si ion irradiation on the film thickness of the GaN layers.
Effect of Si ion irradiation on the film thickness of the GaN layers.

Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.
Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.
eISSN:
2083-134X
Langue:
Anglais
Périodicité:
4 fois par an
Sujets de la revue:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
RSS Feed de la revue