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Etching and ellipsometry studies on CL-VPE grown GaN epilayer

   | 24 feb 2017
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Nakamura S., Iwasa N., Seno M., Mukai T., Jpn. J. Appl. Phys., 31 (1992), 1258.NakamuraS.IwasaN.SenoM.MukaiT.Jpn. J. Appl. Phys.311992125810.1143/JJAP.31.1258Search in Google Scholar

Galagurov L., Chong P S., Appl. Phys. Lett., 68 (1996), 43.GalagurovL.ChongP S.Appl. Phys. Lett.6819964310.1063/1.116750Search in Google Scholar

Shokhovets S., Gadhahn R., Gobsch G., Cheng T.S., Foxon C.T., Kipshidze G.D., Richtor W., J. Appl. Phys., 86 (1999), 2602.ShokhovetsS.GadhahnR.GobschG.ChengT.S.FoxonC.T.KipshidzeG.D.RichtorW.J. Appl. Phys.861999260210.1063/1.371098Search in Google Scholar

Minutessky M.S., White M., Hu E.L., Appl. Phys. Lett., 68 (1996), 1531.MinutesskyM.S.WhiteM.HuE.L.Appl. Phys. Lett.681996153110.1063/1.115689Search in Google Scholar

Zolper J.C., Wilson R.G., Pearton S.J., Appl. Phys. Lett., 68 (1996), 1945.ZolperJ.C.WilsonR.G.PeartonS.J.Appl. Phys. Lett.681996194510.1063/1.115634Search in Google Scholar

Hong S.K., Yao T., Kim B.J., Appl. Phys. Lett., 77 (2000), 82.HongS.K.YaoT.KimB.J.Appl. Phys. Lett.7720008210.1063/1.126884Search in Google Scholar

Weyher J.C., Muller S., Grzegory I., Porowski S., J. Cryst. Growth, 182 (1997) 17.WeyherJ.C.MullerS.GrzegoryI.PorowskiS.J. Cryst. Growth18219971710.1016/S0022-0248(97)00320-5Search in Google Scholar

Yu G., Wang G., Ishikawa H., Umeno M., Soga T., Egawa T., Watanabe J., Jimbo T., Appl. Phys. Lett., 70 (1997), 24.YuG.WangG.IshikawaH.UmenoM.SogaT.EgawaT.WatanabeJ.JimboT.Appl. Phys. Lett.7019972410.1063/1.119157Search in Google Scholar

Lian C.X., Li X.Y., Liu J., Semicond. Sci. Technol., 19 (2004), 417.LianC.X.LiX.Y.LiuJ.Semicond. Sci. Technol.19200441710.1088/0268-1242/19/3/022Search in Google Scholar

Varadarajan E., Puviarasu P., Kumar J., Dhanasekaran R., J. Cryst. Growth, 260 (2004), 43.VaradarajanE.PuviarasuP.KumarJ.DhanasekaranR.J. Cryst. Growth26020044310.1016/j.jcrysgro.2003.08.021Search in Google Scholar

Chen J., Wang J.F., Wang H., Zhu J.J., Zhang S.M., Zhao D.G., Jiang D.C., Yang H., Jhan U., Ploog K.H., Semicond. Sci. Technol., 21 (2006), 1229.ChenJ.WangJ.F.WangH.ZhuJ.J.ZhangS.M.ZhaoD.G.JiangD.C.YangH.JhanU.PloogK.H.Semicond. Sci. Technol.212006122910.1088/0268-1242/21/9/004Search in Google Scholar

Wen T.C., Lee W.I., Sheu J.K., Chi G.C., Solid State Electron., 46 (2002), 555.WenT.C.LeeW.I.SheuJ.K.ChiG.C.Solid State Electron.46200255510.1016/S0038-1101(01)00256-8Search in Google Scholar

Lin M.E., Sverdlov B.N, Strite S., Morkoc H., Drakin A.E., Electron. Lett., 29 (1993) 1759.LinM.E.SverdlovB.NStriteS.MorkocH.DrakinA.E.Electron. Lett.291993175910.1049/el:19931172Search in Google Scholar

Herre O., Wendler E., Gaiduk P.I., Komarov F.F., Klaumunzer S., Meier P., Phys. Rev. B, 8 (1998), 58.HerreO.WendlerE.GaidukP.I.KomarovF.F.KlaumunzerS.MeierP.Phys. Rev. B819985810.1103/PhysRevB.58.4832Search in Google Scholar

eISSN:
2083-134X
Lingua:
Inglese
Frequenza di pubblicazione:
4 volte all'anno
Argomenti della rivista:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties