<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>This work reports on the latest results of etching of different AlxGa1−x
                        N/GaN heterostructures in relation to percentage composition of aluminum. The etching processes were carried out in a reactive ion etching (RIE) system using the mixture of BCl3/Cl2/Ar. The topography of the heterostructures surfaces and the slope were controlled using atomic force microsopy (AFM) technique. The photoluminescence spectra were used to determine the surface damage and to calculate the Al content in AlGaN/GaN heterostructures commonly used for high electron mobility transistors (HEMTs) fabrication.</p></abstract>

This work reports on the latest results of etching of different AlxGa1−x
                        N/GaN heterostructures in relation to percentage composition of aluminum. The etching processes were carried out in a reactive ion etching (RIE) system using the mixture of BCl3/Cl2/Ar. The topography of the heterostructures surfaces and the slope were controlled using atomic force microsopy (AFM) technique. The photoluminescence spectra were used to determine the surface damage and to calculate the Al content in AlGaN/GaN heterostructures commonly used for high electron mobility transistors (HEMTs) fabrication.

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3
                  

Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wroclaw, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3"}

This work reports on the latest results of etching of different AlxGa1−x
                        N/GaN heterostructures in relation to percentage composition...

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Publié en ligne: 08 mai 2012

Pages: 260 - 265

DOI: https://doi.org/10.2478/s13536-011-0045-1

Mots clés
plasma, RIE, reactive ion etching, Cl2, BCl3, HEMT

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Publié en ligne: 08 mai 2012

Pages: 260 - 265

DOI: https://doi.org/10.2478/s13536-011-0045-1

Mots clésplasma, RIE, reactive ion etching, Cl2, BCl3, HEMT

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
plasma, RIE, reactive ion etching, Cl2, BCl3, HEMT