Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

Publié en ligne: 05 déc. 2015

Pages: 323 - 328

Reçu: 04 mars 2015

DOI: https://doi.org/10.2478/jee-2015-0053

Mots clés

silicon HIT solar cell, amorphous-crystalline silicon heterostructure, DLTS measurement, high-energy heavy Xe ions irradiation, radiation hardness

© 2015 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.