Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

Published Online: Dec 05, 2015

Page range: 323 - 328

Received: Mar 04, 2015

DOI: https://doi.org/10.2478/jee-2015-0053

Keywords

silicon HIT solar cell, amorphous-crystalline silicon heterostructure, DLTS measurement, high-energy heavy Xe ions irradiation, radiation hardness

© 2015 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

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