<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CHx) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current-voltage characteristics have been investigated as a function of temperature in the range 20°C-70°C. The results show that for a constant voltage in the range 0.7-1V, the current increases linearly with the environment temperature reaches a maximum at 70°C and then stabilizes. This result suggests that the developed structure can be used for sensing temperatures not exceeding 70°C.</abstract>

This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CHx) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by the plasma of methane /argon mixture. Current-voltage characteristics have been investigated as a function of temperature in the range 20°C-70°C. The results show that for a constant voltage in the range 0.7-1V, the current increases linearly with the environment temperature reaches a maximum at 70°C and then stabilizes. This result suggests that the developed structure can be used for sensing temperatures not exceeding 70°C.

Temperature measurement using a Chx/porous silicon/Si structure encapsulated in a CO2 rich environment

URMER, Abou Bekr BELKAID University, Bp 119, Tlemcen, ALGERIA

UDTS - 02, Bd. Franz FANON, BP 140, Alger, 7 Merveilles, ALGERIA

Advances in Materials Science

Temperature measurement using a Ch/porous silicon/Si structure encapsulated in a CO rich environment

This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device...

Temperature measurement using a Ch_x/porous silicon/Si structure encapsulated in a CO₂ rich environment

Publicado en línea: 26 ago 2010

Páginas: 4 - 10

DOI: https://doi.org/10.2478/v10077-010-0005-1

Palabras clave
porous silicon, temperature sensor, carbon dioxide

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