Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations

Publicado en línea: 08 may 2012

Páginas: 278 - 284

DOI: https://doi.org/10.2478/s13536-011-0047-z

Palabras clave

anisotropic etching, silicon surface, potassium hydroxide, isopropanol concentration, (hkl) planes

© 2011 Wroclaw University of Technology

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