Cite

S. Shestaeva, A. Bingel, P. Munzert, L. Ghazaryan, Ch. Patzig, A. Tünnermann, and A. Szeghalmi, “Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications“, Appl. Opt., vol. 56, no. 4, pp. C47-59, 2017. Search in Google Scholar

G. Abromavičius, S. Kičas, R. Buzelis, “High temperature annealing effects on spectral, microstructural and laser damage resistance properties of sputtered HfO2 and HfO2-SiO2 mixture-based UV mirrors“, Opt. Mat., vol. 95, 109245 (7 p.), 2019. Search in Google Scholar

S.-J. Jeong, Y. Gu, J. Heo, J. Yang, C.-S. Lee, M.-H. Lee, Y. Lee, H. Kim, S. Park, S. Hwang, “Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors“, Scient. Reports, vol. 6, 20907 (12 p.), 2016. Search in Google Scholar

A. Rodríguez Fernández, “Analysis and Modeling of Filamentary Conduction in HfO2-Based Structures”, Doctoral Thesis. Universitat Autònoma de Barcelona. June 2018. Search in Google Scholar

G. Vinuesa, H. García, M. B. González, K. Kalam, M. Zabala, A. Tarre, K. Kukli, A. Tamm, F. Campabadal, J. Jiménez, H. Castán, S. Dueñas, “Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks“, Electronics, vol. 11, no. 3, 479 (9 p.), 2022. Search in Google Scholar

T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, “Ferroelectricity in hafnium oxide thin films“, Appl. Phys. Lett., vol. 99, 102903 (3 p.), 2011. Search in Google Scholar

M. F. Al-Kuhaili, S. M. A. Durrani, E. E. Khawaja, “Characterization of hafnium oxide thin films prepared by electron beam evaporation“, J. Phys. D: Appl. Phys., vol. 37, pp. 1254-61, 2004. Search in Google Scholar

K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, M. Leskelä, “Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water”, Chem. Vap. Depos., vol. 8 no. 5 pp. 199-204, 2002. Search in Google Scholar

S. Y. Lee, H. K. Kim, J. H. Lee, I-H. Yu, J-H. Lee, Ch. S. Hwang, “Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures“, J. Mater. Chem. C, vol. 2, pp. 2058-68, 2014. Search in Google Scholar

K.-M. Kim, J. S. Jang, S.-G. Yoon, J.-Y. Yun, N.-K. Chung, “Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition“, Materials vol. 13, no. 9, 2008 (10 p.), 2020. Search in Google Scholar

B.-Y. Tsui, H.-W. Chang, “Formation of interfacial layer during reactive sputtering of hafnium oxide“, J. Appl. Phys., vol. 93, no. 12, pp. 10119-24, 2003. Search in Google Scholar

D. Franta, I. Ohlídal, D. Nečas, F. Vižd’a, O. Caha, M. Hasoň, P. Pokorný, “Optical characterization of HfO2 thin films“, Thin Solid Films, vol. 519 no. 18, pp. 6085-91, 2011. Search in Google Scholar

E. Hildebrandt, J. Kurian, M. M. Müller, Th. Schroeder, H.-J. Kleebe, L. Alff, “Controlled oxygen vacancy induced p-type conductivity in HfO2-x thin films”, Appl. Phys. Lett., vol. 99, 112902 (3 p.), 2011. Search in Google Scholar

E. S. Field, D. E. Kletecka, “Impact of contamination and aging effects on the long-term laser damage resistance of SiO2/HfO2/TiO2 high reflection coatings for 1054 nm“, Opt. Eng., vol. 58, 105105 (5 p.), 2019. Search in Google Scholar

X. Nie, F. Ma, D. Ma, K. Xu, “Growth mode evolution of hafnium oxide by atomic layer deposition”, J. Vac. Sc. Technol. A, vol. 32, 01A109 (5 p.), 2014. Search in Google Scholar

O. Stenzel, S. Wilbrandt, M. Schürmann, N. Kaiser, H. Ehlers, M. Mende, D. Ristau, S. Bruns, M. Vergöhl, M. Stolze, M. Held, H. Niederwald, Th. Koch, W. Riggers, P. Burdack, G. Mark, R. Schäfer, S. Mewes, M. Bischoff, M. Arntzen, F. Eisenkrämer, M. Lappschies, S. Jakobs, S. Koch, B. Baumgarten, A. Tünnermann, “Mixed oxide coatings for optics”, Appl. Opt., vol. 50, no. 9, pp. C69-74, 2011. Search in Google Scholar

M. Jerman, Zh. Qiao, D. Mergel, “Refractive index of thin films of SiO2, ZrO2, and HfO2 as a function of the films’ mass density“, Appl. Opt., vol. 44, no. 15, pp. 3006-12, 2005. Search in Google Scholar

M. Alvisi, S. Scaglione, S. Martelli, A. Rizzo, L. Vasanelli, “Structural and optical modification in hafnium oxide thin films related to the momentum parameter transferred by ion beam assistance“, Thin Solid Films, vol. 354, no. 1-2, pp. 19-23, 1999. Search in Google Scholar

D. Franta, D. Nečas, I. Ohlídal, “Universal dispersion model for characterization of optical thin films over a wide spectral range: application to hafnia“, Appl. Opt., vol. 54, no. 31, pp. 9108-19, 2015. Search in Google Scholar

R. Waser, “Redox-Based Resistive Switching Memories”, Journal of Nanoscience and Nanotechnology, vol. 12, no. 10, pp. 7628-40, 2012. Search in Google Scholar

A. C. Jasmin, “Filamentary model in resistive switching materials”, AIP Conference Proceedings, vol. 1901, 060004 (5 p.), 2017. Search in Google Scholar

D. Ielmini, “Resistive switching memories based on metal oxides: mechanisms, reliability and scaling”, Semiconductor Science and Technology, vol. 31, 063002 (25 p.), 2016. Search in Google Scholar

L. Goux, X. P. Wang, Y. Y. Chen, L. Pantisano, N. Jossart, B. Govoreanu, J. A. Kittl, M. Jurczak, L. Altimime, D. J. Wouters, “Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems”, Electrochem. Solid State Lett., vol. 14, no. 6, pp. H244–6, 2011. Search in Google Scholar

C. Giovinazzo, J. Sandrini, E. Shahrabi, O. T. Celik, Y. Leblebici, C. Ricciardi, “Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)”, ACS Appl. Electron. Mater., vol. 1, no. 6, pp. 900–909, 2019. Search in Google Scholar

S. Brivio, J. Frascaroli, S. Spiga, “Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices”, Appl. Phys. Lett., vol. 107, 023504 (6 p.), 2015. Search in Google Scholar

M. Otsus, J. Merisalu, A. Tarre, A.-L. Peikolainen, J. Kozlova, K. Kukli, A. Tamm, “Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles”, Electronics, vol. 11, no. 18, 2963 (18 p.), 2022. Search in Google Scholar

L. Goux, Y.-Y. Chen, L. Pantisano, X.-P. Wang, G. Groeseneken, M. Jurczak, D. J. Wouters, “On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO2\Pt Memory Systems”, Electrochem. Solid State Lett., vol. 13, no. 6, pp. G54–6, 2010. Search in Google Scholar

I. Valov, “Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)”, Semiconductor Science and Technology, vol. 32, 093006 (20 p.), 2017. Search in Google Scholar

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