<abstract xmlns="http://www.w3.org/1999/xhtml">

Fin-typed field effect transistor (FinFET) has considered a suitable device for low power and high-performance applications. The incorporation of gate dielectric lanthanum doped zirconium oxide (LaZrO2) in the 14 nm silicon on insulator (SOI) FinFET not only enhanced effective carrier mobility but also diminished the short channel effects (SCEs). The FinFET embodiment with LaZrO2 has dwindled subthreshold swing (SS), reduced drain-induced barrier lowering (DIBL), and raised on-current to off-current ratio as a contrast to SiO2-based FinFET. A remarkable enhancement of 1.18×, 11×, and 1.3× for transconductance (<italic>g</italic><italic>m</italic>), early voltage (<italic>V</italic><italic>EA</italic>), and an intrinsic gain (<italic>A</italic><italic>V</italic>), respectively, have been investigated. Further, LaZrO2-based n-FinFET and p-FinFET devices have devised with equal dimensions. The improved noise margin of 0.375 V using a single-fin FinFET-based inverter circuit has proven the acceptance of this device in a circuit application.
</abstract>

Fin-typed field effect transistor (FinFET) has considered a suitable device for low power and high-performance applications. The incorporation of gate dielectric lanthanum doped zirconium oxide (LaZrO2) in the 14 nm silicon on insulator (SOI) FinFET not only enhanced effective carrier mobility but also diminished the short channel effects (SCEs). The FinFET embodiment with LaZrO2 has dwindled subthreshold swing (SS), reduced drain-induced barrier lowering (DIBL), and raised on-current to off-current ratio as a contrast to SiO2-based FinFET. A remarkable enhancement of 1.18×, 11×, and 1.3× for transconductance (gm), early voltage (VEA), and an intrinsic gain (AV), respectively, have been investigated. Further, LaZrO2-based n-FinFET and p-FinFET devices have devised with equal dimensions. The improved noise margin of 0.375 V using a single-fin FinFET-based inverter circuit has proven the acceptance of this device in a circuit application.

Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter

International Journal on Smart Sensing and Intelligent Systems

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Impact of lanthanum doped zirconium oxide (LaZrO) gate dielectric material on FinFET inverter

running-head

Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter

Fin-typed field effect transistor (FinFET) has considered a suitable device for low power and high-performance applications. The incorporation of gate...

Impact of lanthanum doped zirconium oxide (LaZrO₂) gate dielectric material on FinFET inverter

Article Category: Research-Article

Publicado en línea: 19 nov 2020

Páginas: 1 - 10

Recibido: 19 sept 2020

DOI: https://doi.org/10.21307/ijssis-2020-032

Palabras clave
FinFET, Inverter, Dielectric, Subthreshold swing, Drain-induced barrier lowering, Transconductance

© 2020 Gurpurneet Kaur et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter

Article Category: Research-Article

Publicado en línea: 19 nov 2020

Páginas: 1 - 10

Recibido: 19 sept 2020

DOI: https://doi.org/10.21307/ijssis-2020-032

Palabras claveFinFET, Inverter, Dielectric, Subthreshold swing, Drain-induced barrier lowering, Transconductance

© 2020 Gurpurneet Kaur et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Impact of lanthanum doped zirconium oxide (LaZrO₂) gate dielectric material on FinFET inverter

Palabras clave
FinFET, Inverter, Dielectric, Subthreshold swing, Drain-induced barrier lowering, Transconductance