<abstract xmlns="http://www.w3.org/1999/xhtml"> Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2is similar</abstract>

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2is similar

High Pressure Raman Study of Layered Semiconductor Tlgase2

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High Pressure Raman Study of Layered Semiconductor Tlgase

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Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced...

High Pressure Raman Study of Layered Semiconductor Tlgase₂

Publicado en línea: 25 jun 2018

Páginas: 203 - 208

Recibido: 18 jul 2017

Aceptado: 15 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0040

Palabras clave
layered semiconductor, high pressure, Raman study

© 2018 S.H. Jabarov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High Pressure Raman Study of Layered Semiconductor Tlgase2

Publicado en línea: 25 jun 2018

Páginas: 203 - 208

Recibido: 18 jul 2017

Aceptado: 15 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0040

Palabras clavelayered semiconductor, high pressure, Raman study

© 2018 S.H. Jabarov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High Pressure Raman Study of Layered Semiconductor Tlgase₂

Palabras clave
layered semiconductor, high pressure, Raman study