<abstract xmlns="http://www.w3.org/1999/xhtml"> Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2is similar</abstract>

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced first-order phase transition accompanied by reconstruction of the layer structure was observed at the pressure P ~ 0.9 GPa. The mode-Grüneisen parameters of intralayer bonds were calculated for TlGaSe2. The contribution of thermal expansion to temperature changes of phonon frequencies was defined. The type of intralayer bonds and their pressure transformation were analyzed in layered TlGaSe2. It was shown that the nature of intramolecular forces in molecular crystals and intralayer forces in layered GaS, GaSe and TlGaSe2is similar

High Pressure Raman Study of Layered Semiconductor Tlgase2

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High Pressure Raman Study of Layered Semiconductor Tlgase

{"article-title":{"sub":2,"content":"High Pressure Raman Study of Layered Semiconductor Tlgase"}}

Raman spectroscopy measurements of a monoclinic layered semiconductor TlGaSe2were performed in a pressure range up to 10.24 GPa. The pressure-induced...

High Pressure Raman Study of Layered Semiconductor Tlgase₂

Online veröffentlicht: 25. Juni 2018

Seitenbereich: 203 - 208

Eingereicht: 18. Juli 2017

Akzeptiert: 15. März 2018

DOI: https://doi.org/10.1515/msp-2018-0040

Schlüsselwörter
layered semiconductor, high pressure, Raman study

© 2018 S.H. Jabarov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High Pressure Raman Study of Layered Semiconductor Tlgase2

Online veröffentlicht: 25. Juni 2018

Seitenbereich: 203 - 208

Eingereicht: 18. Juli 2017

Akzeptiert: 15. März 2018

DOI: https://doi.org/10.1515/msp-2018-0040

Schlüsselwörterlayered semiconductor, high pressure, Raman study

© 2018 S.H. Jabarov et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High Pressure Raman Study of Layered Semiconductor Tlgase₂

Schlüsselwörter
layered semiconductor, high pressure, Raman study