<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Al and Cu doped ZnO nanoparticles are considered as appropriate for modulation of structural and optoelectronic properties. Al atoms are found to substitute the host Zn whereas Cu dopants mainly segregate in grain boundaries and thereby determine the optical properties. The undoped as well as Al and Cu doped ZnO exhibit spherical well defined particles. The spherical nanoparticles change to rod type structures on co-doping. The average particle size decreases on doping what consequently results in an increment in band gap. Blue shift in UV absorption is governed by the functional group of glucose; further blue shift occurring on metal doping may be attributed to Burstein-Moss effect. PL spectra of doped and undoped ZnO show a dominant near band gap UV emission along with visible emission owing to the defects. The PL peak intensity increases on doping with Cu and Al. The linear I-V characteristics indicate the ohmic behavior of ZnO nanostructures.</p></abstract>

Al and Cu doped ZnO nanoparticles are considered as appropriate for modulation of structural and optoelectronic properties. Al atoms are found to substitute the host Zn whereas Cu dopants mainly segregate in grain boundaries and thereby determine the optical properties. The undoped as well as Al and Cu doped ZnO exhibit spherical well defined particles. The spherical nanoparticles change to rod type structures on co-doping. The average particle size decreases on doping what consequently results in an increment in band gap. Blue shift in UV absorption is governed by the functional group of glucose; further blue shift occurring on metal doping may be attributed to Burstein-Moss effect. PL spectra of doped and undoped ZnO show a dominant near band gap UV emission along with visible emission owing to the defects. The PL peak intensity increases on doping with Cu and Al. The linear I-V characteristics indicate the ohmic behavior of ZnO nanostructures.

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

Department of Physics, Assam University (Diphu Campus), 782 460,

Department of Physics, Rajiv Gandhi University, Itanagar, 791 112,

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Al and Cu doped ZnO nanoparticles are considered as appropriate for modulation of structural and optoelectronic properties. Al atoms are found to substitute...

Peak	ZnO		ZnO:Al		ZnO:Cu		ZnO:Al,Cu
Nos.	λ [nm]	Energy [eV]	λ [nm]	Energy [eV]	λ [nm]	Energy [eV]	λ [nm]	Energy [eV]
I	356	3.49	355	3.50	355	3.50	357	3.48
II	395	3.15	399	3.12	396	3.14	399	3.12
III	422	2.95	468	2.66	467	2.66	439	2.83
IV	602	2.07	599	2.08	613	2.03	600	2.07

Standard d value [nm]	Observed d value of ZnO	Observed d value of ZnO:Al	Observed d value of ZnO:Cu	Observed d value of ZnO(Al,Cu)	(h k l)
0.28204	0.28047	0.28760	0.273697	0.270137	100
0.26062	0.26073	0.25919	0.265534	0.265534	002
0.24806	0.24116	0.23220	0.253398	0.251864	101
0.19141	0.19838	0.19745	0.183749	0.188419	102
0.16284	0.16554	0.16620	0.155873	0.162570	110
0.14793	0.14919	0.14316	0.144454	0.152229	103
0.13810	0.13471	0.13234	0.137529	0.134283	112

Sample	Particle size from XRD [nm]	Particle size from HRTEM [nm]	Energy band gap [eV]	Blue shift [eV]	Particle size from EMA [nm]
ZnO	6.25	5.3	3.7	0.33	5.18
ZnO:Al	5.67	4.1	3.8	0.43	4.52
ZnO:Cu	9.39	5.0	3.78	0.41	4.62
ZnO:Al,Cu	7.46	4.2	4.13	0.76	3.39

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

Article Category: Research Article

Publicado en línea: 27 abr 2016

Páginas: 69 - 78

Recibido: 25 abr 2015

Aceptado: 08 ene 2016

DOI: https://doi.org/10.1515/msp-2016-0030

Palabras clave
d-value, doping, defects, band gap, Burstein-Moss effect, conductivity

© 2016 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Fig. 1

Fig. 2

Fig. 3

Fig. 4

Fig. 5

Fig. 6

Fig. 9

Fig. 7

Fig. 8

PL peak positions and energy levels in the samples.

Change of d values corresponding to lattice planes.

Particle sizes and energy band gaps of ZnO quantum dots.

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

Article Category: Research Article

Publicado en línea: 27 abr 2016

Páginas: 69 - 78

Recibido: 25 abr 2015

Aceptado: 08 ene 2016

DOI: https://doi.org/10.1515/msp-2016-0030

Palabras claved-value, doping, defects, band gap, Burstein-Moss effect, conductivity

© 2016 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Fig. 1

Fig. 2

Fig. 3

Fig. 4

Fig. 5

Fig. 6

Fig. 9

Fig. 7

Fig. 8

PL peak positions and energy levels in the samples.

Change of d values corresponding to lattice planes.

Particle sizes and energy band gaps of ZnO quantum dots.

Palabras clave
d-value, doping, defects, band gap, Burstein-Moss effect, conductivity