<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Thin films of non-stoichiometric indium antimonide (In0.66Sb0.34) have been deposited by electron beam evaporation technique on glass substrates at different substrate temperatures, (300–473 K). The films have polycrystalline nature with zinc blende structure. The decrease in electrical resistivity with increasing temperature shows semiconducting behavior. Hall measurements indicate that the films are of n-type. Optical transmission spectra of as deposited thin films have been measured at different substrate temperatures. All the electrical parameters i.e. electron mobility (µ), carrier concentration (n), resistivity (ρ), activation energy and band gap (E
                        g) have been found to be temperature dependent. Suitable explanations are given in the paper.</p></abstract>

Thin films of non-stoichiometric indium antimonide (In0.66Sb0.34) have been deposited by electron beam evaporation technique on glass substrates at different substrate temperatures, (300–473 K). The films have polycrystalline nature with zinc blende structure. The decrease in electrical resistivity with increasing temperature shows semiconducting behavior. Hall measurements indicate that the films are of n-type. Optical transmission spectra of as deposited thin films have been measured at different substrate temperatures. All the electrical parameters i.e. electron mobility (µ), carrier concentration (n), resistivity (ρ), activation energy and band gap (E
                        g) have been found to be temperature dependent. Suitable explanations are given in the paper.

Effect of substrate temperature on the electrical and optical properties of electron beam evaporated indium antimonide thin films

Department of Physics & Electronics, Dr. R.M.L Avadh University, Faizabad, 224001, India

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Thin films of non-stoichiometric indium antimonide (In0.66Sb0.34) have been deposited by electron beam evaporation technique on glass substrates at different...

Effect of substrate temperature on the electrical and optical properties of electron beam evaporated indium antimonide thin films

Online veröffentlicht: 14. Dez. 2012

Seitenbereich: 375 - 381

DOI: https://doi.org/10.2478/s13536-012-0044-x

Schlüsselwörter
InSb thin films, Hall effect, mobility, resistivity, activation energy, band gap

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Effect of substrate temperature on the electrical and optical properties of electron beam evaporated indium antimonide thin films

Online veröffentlicht: 14. Dez. 2012

Seitenbereich: 375 - 381

DOI: https://doi.org/10.2478/s13536-012-0044-x

SchlüsselwörterInSb thin films, Hall effect, mobility, resistivity, activation energy, band gap

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
InSb thin films, Hall effect, mobility, resistivity, activation energy, band gap