<abstract xmlns="http://www.w3.org/1999/xhtml"><p> We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-(O)/SWCNT/p- GaN and Au/Ni-Mg-O/p-GaN, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer</p></abstract>

We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-(O)/SWCNT/p- GaN and Au/Ni-Mg-O/p-GaN, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Institute of Electronics and Photonics, Slovak University of Technology, Ilkoviova 3, 812 19 Bratislava, Slovakia

Danubia NanoTech, s.r.o., Ilkoviova 3, 841 04 Bratislava, Slovakia

Journal of Electrical Engineering

We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-(O)/SWCNT/p- GaN and Au/Ni-Mg-O/p-GaN, thus with and...

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Online veröffentlicht: 23. Nov. 2013

Seitenbereich: 390 - 392

DOI: https://doi.org/10.2478/jee-2013-0060

Schlüsselwörter
p-GaN, Au/Ni-Mg-O/p-GaN, Au/Ni-Mg-(O)/SWCNT/p-GaN, single-walled carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, circular transmission line method (CTLM)

This content is open access.

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Online veröffentlicht: 23. Nov. 2013

Seitenbereich: 390 - 392

DOI: https://doi.org/10.2478/jee-2013-0060

Schlüsselwörterp-GaN, Au/Ni-Mg-O/p-GaN, Au/Ni-Mg-(O)/SWCNT/p-GaN, single-walled carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, circular transmission line method (CTLM)

This content is open access.

Schlüsselwörter
p-GaN, Au/Ni-Mg-O/p-GaN, Au/Ni-Mg-(O)/SWCNT/p-GaN, single-walled carbon nanotubes (SWCNT), ohmic contact, specific contact resistance, circular transmission line method (CTLM)