<abstract xmlns="http://www.w3.org/1999/xhtml"> In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N2 plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.</abstract>

In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N2 plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.

The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N2 Plasma

Institute of Informatics, Slovak Academy of Sciences, Bratislava, Slovakia

Institute of Electronics and Photonics, STU FEI, Bratislava, Slovakia

Journal of Electrical Engineering

The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N Plasma

In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV...

The AZ 5214E Resist in EBDW Lithography and its Use as a RIE Etch–Mask in Etching Thin Ag Layers in N₂ Plasma

Online veröffentlicht: 23. Nov. 2013

Seitenbereich: 371 - 375

DOI: https://doi.org/10.2478/jee-2013-0056

Schlüsselwörter
AZ 5214E resist, PMMA resist, image reversal, EBDW lithography, characteristic curves, RIE, etch-rates

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