<abstract xmlns="http://www.w3.org/1999/xhtml"> AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.</abstract>

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.

Structure of AlN films deposited by magnetron sputtering method

Department of Material Physics, National Centre for Nuclear Research (NCBJ), Andrzeja Soltana 7, 05-400 Otwock-Swierk, Poland

Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw, Poland

Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668, Warsaw, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Structure of AlN films deposited by magnetron sputtering method"}

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes...

Structure of AlN films deposited by magnetron sputtering method

Online veröffentlicht: 30. Aug. 2016

Seitenbereich: 639 - 643

Eingereicht: 15. Jan. 2015

Akzeptiert: 25. Apr. 2015

DOI: https://doi.org/10.1515/msp-2015-0073

Schlüsselwörter
AlN films, magnetron sputtering method, crystalline structure

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Structure of AlN films deposited by magnetron sputtering method

Online veröffentlicht: 30. Aug. 2016

Seitenbereich: 639 - 643

Eingereicht: 15. Jan. 2015

Akzeptiert: 25. Apr. 2015

DOI: https://doi.org/10.1515/msp-2015-0073

SchlüsselwörterAlN films, magnetron sputtering method, crystalline structure

© 2016

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
AlN films, magnetron sputtering method, crystalline structure