Login
Register
Reset Password
Publish & Distribute
Publishing Solutions
Distribution Solutions
Subjects
Architecture and Design
Arts
Business and Economics
Chemistry
Classical and Ancient Near Eastern Studies
Computer Sciences
Cultural Studies
Engineering
General Interest
Geosciences
History
Industrial Chemistry
Jewish Studies
Law
Library and Information Science, Book Studies
Life Sciences
Linguistics and Semiotics
Literary Studies
Materials Sciences
Mathematics
Medicine
Music
Pharmacy
Philosophy
Physics
Social Sciences
Sports and Recreation
Theology and Religion
Publications
Journals
Books
Proceedings
Publishers
Blog
Contact
Search
EUR
USD
GBP
English
English
Deutsch
Polski
Español
Français
Italiano
Cart
Home
Journals
Journal of Electrical Engineering
Volume 63 (2012): Issue 6 (November 2012)
Open Access
Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer
Jozef Liday
Jozef Liday
,
Peter Vogrinčič
Peter Vogrinčič
,
Andrej Vincze
Andrej Vincze
,
Juraj Breza
Juraj Breza
and
Ivan Hotový
Ivan Hotový
| Dec 29, 2012
Journal of Electrical Engineering
Volume 63 (2012): Issue 6 (November 2012)
About this article
Previous Article
Next Article
Abstract
References
Authors
Articles in this Issue
Preview
PDF
Cite
Share
Published Online:
Dec 29, 2012
Page range:
397 - 401
DOI:
https://doi.org/10.2478/v10187-012-0059-x
Keywords
p-GaN
,
ohmic contact
,
contact resistivity
,
Au/Ni-Mg(Zn)-O/p-GaN contact structure
,
annealing
,
Auger electron spectra
,
secondary ion mass spectra
This content is open access.
Jozef Liday
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkoviˇcova 3, 812 19 Bratislava
Peter Vogrinčič
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkoviˇcova 3, 812 19 Bratislava
Andrej Vincze
International Laser Centre, Ilkoviˇcova 3, 812 19 Bratislava, Slovakia
Juraj Breza
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkoviˇcova 3, 812 19 Bratislava
Ivan Hotový
Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkoviˇcova 3, 812 19 Bratislava