1. bookVolume 31 (2013): Issue 4 (October 2013)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Open Access

Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE

Published Online: 15 Dec 2013
Volume & Issue: Volume 31 (2013) - Issue 4 (October 2013)
Page range: 595 - 600
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

In this paper we report on the optical and electrical studies of single GaAs1−x Nx epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1−x Nx contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80–480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method.

Keywords

[1] Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., Yazawa Y., Japan. J. Appl. Phys., 35 (1996), 1273. http://dx.doi.org/10.1143/JJAP.35.127310.1143/JJAP.35.1273Search in Google Scholar

[2] Nakahara K., Kondow M., Kitatani T., Lalson M. C., Uomi K., IEEE Photonics Technol. Lett., 10 (1998), 487. http://dx.doi.org/10.1109/68.66256910.1109/68.662569Search in Google Scholar

[3] Friedman D.J., Geisz J.F., Kurtz S.R., Olson J.M., J. Cryst. Growth, 195 (1998), 409. http://dx.doi.org/10.1016/S0022-0248(98)00561-210.1016/S0022-0248(98)00561-2Search in Google Scholar

[4] Kurtz S. R., Myers D., Olsonet J. M., Proceedings of 26th IEEE PVSEC, IEEE, New York, 1997, 875. Search in Google Scholar

[5] Ściana B. et al., Cryst. Res. Technol., 47 (2012), 313. http://dx.doi.org/10.1002/crat.20110041510.1002/crat.201100415Search in Google Scholar

[6] Taliercio T. et al., Phys. Rev. B, 69 (2004), 073303. http://dx.doi.org/10.1103/PhysRevB.69.07330310.1103/PhysRevB.69.073303Search in Google Scholar

[7] Ariel V., Garber V., Rosenfeld D., Bahir G., Appl. Phys. Lett., 66 (1995), 2101. http://dx.doi.org/10.1063/1.11391610.1063/1.113916Search in Google Scholar

[8] Rhoderic E. H., Wiliams R. H., Metal Semiconductor Contact, 2nd ed., Clarenden, Oxford, 1988. Search in Google Scholar

[9] Sze S. M., Kwok K. Ng, Physics of Semiconductor Devices, 3rd ed., J. Wiley and Sons, Inc., Hoboken, New Jersey, 2007. Search in Google Scholar

[10] Zhang Y., Mascarenhas A., Xin H.P., Tu C.W., Phys. Rev. B, 63 (2001), 161303. http://dx.doi.org/10.1103/PhysRevB.63.16130310.1103/PhysRevB.63.161303Search in Google Scholar

Recommended articles from Trend MD

Plan your remote conference with Sciendo