Login
Register
Reset Password
Publish & Distribute
Publishing Solutions
Distribution Solutions
Subjects
Architecture and Design
Arts
Business and Economics
Chemistry
Classical and Ancient Near Eastern Studies
Computer Sciences
Cultural Studies
Engineering
General Interest
Geosciences
History
Industrial Chemistry
Jewish Studies
Law
Library and Information Science, Book Studies
Life Sciences
Linguistics and Semiotics
Literary Studies
Materials Sciences
Mathematics
Medicine
Music
Pharmacy
Philosophy
Physics
Social Sciences
Sports and Recreation
Theology and Religion
Publications
Journals
Books
Proceedings
Publishers
Blog
Contact
Search
EUR
USD
GBP
English
English
Deutsch
Polski
Español
Français
Italiano
Cart
Home
Journals
Materials Science-Poland
Volume 31 (2013): Issue 4 (October 2013)
Open Access
Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap
D. Pucicki
D. Pucicki
,
K. Bielak
K. Bielak
,
R. Kudrawiec
R. Kudrawiec
,
D. Radziewicz
D. Radziewicz
and
B. Ściana
B. Ściana
| Dec 15, 2013
Materials Science-Poland
Volume 31 (2013): Issue 4 (October 2013)
About this article
Previous Article
Next Article
Abstract
References
Authors
Articles in this Issue
Preview
PDF
Cite
Share
Published Online:
Dec 15, 2013
Page range:
489 - 494
DOI:
https://doi.org/10.2478/s13536-013-0137-1
Keywords
dilute nitrides
,
composition determination
,
quantum well
,
BAC band-anticrossing model
,
HRXRD high resolution X-ray diffraction
© 2013 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
D. Pucicki
Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław, Russia
K. Bielak
Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław, Russia
R. Kudrawiec
Inst. of Physics, Wrocław University of Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Russia
D. Radziewicz
Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław, Russia
B. Ściana
Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław, Russia