<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Determination of indium and nitrogen content in InGaAsN quantum wells (QWs) is often based on the analysis of high-resolution X-ray diffraction (HRXRD) measurements. The comparison of diffraction curves of two similar samples, with and without nitrogen, together with an assumption of constant indium incorporation efficiency during the growth of layers with and without nitrogen, may lead to a large deviation in the determined In and N content. The HRXRD curve simulations supported by bandgap determination and calculations seem to be a solution of this problem. Comparison of the results achieved from simulated HRXRD curves with the calculations of all QWs transitions measured by contactless electro-reflectance (CER) can lead to reduction of deviations in composition determination of InGaAsN quantum wells. The proposed algorithm was applied for investigation of InGaAsN QWs grown by atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE).</p></abstract>

Determination of indium and nitrogen content in InGaAsN quantum wells (QWs) is often based on the analysis of high-resolution X-ray diffraction (HRXRD) measurements. The comparison of diffraction curves of two similar samples, with and without nitrogen, together with an assumption of constant indium incorporation efficiency during the growth of layers with and without nitrogen, may lead to a large deviation in the determined In and N content. The HRXRD curve simulations supported by bandgap determination and calculations seem to be a solution of this problem. Comparison of the results achieved from simulated HRXRD curves with the calculations of all QWs transitions measured by contactless electro-reflectance (CER) can lead to reduction of deviations in composition determination of InGaAsN quantum wells. The proposed algorithm was applied for investigation of InGaAsN QWs grown by atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE).

Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372, Wrocław, Russia

Inst. of Physics, Wrocław University of Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Russia

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Determination of indium and nitrogen content in InGaAsN quantum wells (QWs) is often based on the analysis of high-resolution X-ray diffraction (HRXRD)...

Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Online veröffentlicht: 15. Dez. 2013

Seitenbereich: 489 - 494

DOI: https://doi.org/10.2478/s13536-013-0137-1

Schlüsselwörter
dilute nitrides, composition determination, quantum well, BAC band-anticrossing model, HRXRD high resolution X-ray diffraction

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Online veröffentlicht: 15. Dez. 2013

Seitenbereich: 489 - 494

DOI: https://doi.org/10.2478/s13536-013-0137-1

Schlüsselwörterdilute nitrides, composition determination, quantum well, BAC band-anticrossing model, HRXRD high resolution X-ray diffraction

© 2013 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
dilute nitrides, composition determination, quantum well, BAC band-anticrossing model, HRXRD high resolution X-ray diffraction