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Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Tsung-I Liao

Tsung-I Liao

Program on Semiconductor Manufacturing Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung UniversityTainan City, Taiwan
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Liao, Tsung-I
, 
Sheng-Po Chang

Sheng-Po Chang

Department of Microelectronics Engineering, National Kaohsiung University of Science and TechnologyKaohsiung City 81157, Taiwan
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Chang, Sheng-Po
 and 
Shoou-Jinn Chang

Shoou-Jinn Chang

Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung UniversityTainan City, Taiwan
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Chang, Shoou-Jinn
  
Jun 30, 2025
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Article Category: Research Article
Published Online: Jun 30, 2025
Page range: 143 - 152
Received: Jun 11, 2025
Accepted: Aug 04, 2025
DOI: https://doi.org/10.2478/msp-2025-0025
Keywords
© 2025 Tsung-I Liao, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
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