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Pt/Al2O3/HfO2/Ti/TiN bi-layer RRAM device for imply–inhibit logic applications: Unveiling the resistive potential by experiment and simulation

Nithya Natarajan

Nithya Natarajan

Department of Electrical and Electronics Engineering, Kumaraguru College of TechnologyCoimbatore-641049, India
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Natarajan, Nithya
 and 
Paramasivam Kuppusamy

Paramasivam Kuppusamy

Department of Electrical and Electronics Engineering, Kumaraguru College of TechnologyCoimbatore-641049, India
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Kuppusamy, Paramasivam
  
Mar 31, 2025
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Article Category: Research Article
Published Online: Mar 31, 2025
Page range: 196 - 209
Received: Feb 05, 2025
Accepted: May 25, 2025
DOI: https://doi.org/10.2478/msp-2025-0016
Keywords
© 2025 Nithya Natarajan and Paramasivam Kuppusamy, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
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