Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers
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Nov 23, 2013
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Published Online: Nov 23, 2013
Page range: 390 - 392
DOI: https://doi.org/10.2478/jee-2013-0060
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Liday, Jozef
Vogrinčič, Peter
Vretenár, Viliam
Hotový, Ivan
Kotlár, Mário
Marton, Marián
Řeháček, Vlastimil