Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates
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Li, N.; Ho, C.P.; Zhu, S.; Fu, Y.H.; Zhu, Y.; Lee, L.Y.T. Aluminium nitride integrated photonics: A review. Nanophotonics 2021, 10, 2347–2387, doi:10.1515/nanoph-2021-0130.Search in Google Scholar
Cunha, C.L., Pimenta, T.C., Fraga, M.A. Amorim Fraga, M. Development and Applications of Aluminum Nitride Thin Film Technology. In Thin Films - Deposition Methods and Applications; IntechOpen 2023, doi:10.5772/intechopen.106288.Search in Google Scholar
Thapa, R.; Saha, B.; Chattopadhyay, K.K. Enhanced field emission from Si doped nanocrystalline AlN thin films. Applied Surface Science 2009, 255, 4536–4541, doi:10.1016/j.apsusc.2008.11.063.Search in Google Scholar
García-Méndez, M.; Morales-Rodríguez, S.; Machorro, R.; De La Cruz, W. Characterization of ALN thin films deposited by DC reactive magnetron sputtering. Revista Mexicana de Fisica 2008, 54, 271–278.Search in Google Scholar
Baker, T.; Mayo, A.; Veisi, Z.; Lu, P.; Schmitt, J. Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor. In Proceedings of the Journal of Crystal Growth; North-Holland 2014; Vol. 403, pp. 29–31.Search in Google Scholar
Wu, S.; Xu, R.; Guo, B.; Ma, Y.; Yu, D. Influence of growth parameters and systematical analysis on 8-inch piezoelectric AlN thin films by magnetron sputtering. Materials Science in Semiconductor Processing 2024, 169, 107895, doi:10.1016/j.mssp.2023.107895.Search in Google Scholar
Tholander, C.; Tasnádi, F.; Abrikosov, I.A.; Hultman, L.; Birch, J.; Alling, B. Large piezoelectric response of quarternary wurtzite nitride alloys and its physical origin from first principles. Physical Review B - Condensed Matter and Materials Physics 2015, 92, 174119, doi:10.1103/physrevb.92.174119/figures/3/medium.Search in Google Scholar
Besleaga, C.; Dumitru, V.; Trinca, L.M.; Popa, A.C.; Negrila, C.C.; Kołodziejczyk, Ł.; Luculescu, C.R.; Ionescu, G.C.; Ripeanu, R.G.; Vladescu, A. et al. Mechanical, corrosion and biological properties of room-temperature sputtered aluminum nitride films with dissimilar nanostructure. Nanomaterials 2017, 7, 394, doi:10.3390/nano7110394.Search in Google Scholar
Wu, H.; Fu, X.; Wang, Y.; Guo, J.; Shen, J.; Hu, S. Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure. Results in Physics 2021, 29, 104768, doi:10.1016/j.rinp.2021.104768.Search in Google Scholar
Viswanathan, E.; Sundareswari, M.; Krishnaveni, S.; Manjula, M.; Jayalakshmi, D.S. Theoretical Investigation on Effect of Boron on Improving the Hardness of Zincblende-Aluminium Nitride and Its Mechanical, Thermal and Thermoelectric Properties. Journal of Superhard Materials 2019, 41, 321–333, doi:10.3103/S1063457619050046.Search in Google Scholar
Gillinger, M.; Schneider, M.; Bittner, A.; Nicolay, P.; Schmid, U. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films. Journal of Applied Physics 2015, 117, 65303, doi:10.1063/1.4907208.Search in Google Scholar
Cheng, Z.; Koh, Y.R.; Mamun, A.; Shi, J.; Bai, T.; Huynh, K.; Yates, L.; Liu, Z.; Li, R.; Lee, E.; et al. Experimental observation of high intrinsic thermal conductivity of AlN. Physical Review Materials 2020, 4, 044602, doi:10.1103/PhysRevMaterials.4.044602.Search in Google Scholar
Galca, A.C.; Stan, G.E.; Trinca, L.M.; Negrila, C.C.; Nistor, L.C. Structural and optical properties of c-axis oriented aluminum nitride thin films prepared at low temperature by reactive radiofrequency magnetron sputtering. Thin Solid Films 2012, 524, 328–333, doi:10.1016/j.tsf.2012.10.015.Search in Google Scholar
Zou, Y.; Zhang, Y.; Hu, Y.; Gu, H. Ultraviolet detectors based on wide bandgap semiconductor nanowire: A review. Sensors (Switzerland) 2018, 18, 2072.Search in Google Scholar
Li, J.; Fan, Z.Y.; Dahal, R.; Nakarmi, M.L.; Lin, J.Y.; Jiang, H.X. 200 nm deep ultraviolet photodetectors based on AlN. Applied Physics Letters 2006, 89, 213510, doi:10.1063/1.2397021.Search in Google Scholar
Shu, L.; Peng, B.; Li, C.; Gong, D.; Yang, Z.; Liu, X.; Zhang, W. The characterization of surface acoustic wave devices based on AlN-metal structures. Sensors (Switzerland) 2016, 16, 526, doi:10.3390/s16040526.Search in Google Scholar
Liu, X.; Bruch, A.W.; Gong, Z.; Lu, J.; Surya, J.B.; Zhang, L.; Wang, J.; Yan, J.; Tang, H.X. Ultra-high-Q UV microring resonators based on a single-crystalline AlN platform. Optica 2018, 5, 1279, doi:10.1364/optica.5.001279.Search in Google Scholar
Hiroki, M.; Taniyasu, Y.; Kumakura, K. High-Temperature Performance of AlN MESFETs with Epitaxially Grown n-Type AlN Channel Layers. IEEE Electron Device Letters 2022, 43, 350–353, doi:10.1109/LED.2022.3141100.Search in Google Scholar
Jiang, W.; Chen, J.; Liu, X.; Niu, Z.; Liu, K.; Peng, W.; Wang, Z.; Lin, Z.R. Thin film aluminum nitride surface acoustic wave resonators for quantum acoustodynamics. Applied Physics Letters 2023, 123, 24002, doi:10.1063/5.0158083.Search in Google Scholar
Rey-Mermet, S.; Lanz, R.; Muralt, P. AlN thin film resonators operating at 8 GHz used as sensors for organic films. In Proceedings of the Proceedings - IEEE Ultrasonics Symposium 2005, 2, 1253–1257.Search in Google Scholar
Krugel, G.; Jenkner, F.; Moldovan, A.; Wolke, W.; Rentsch, J.; Preu, R. Investigations on the passivation mechanism of AlN:H and AlN:H-SiN:H stacks. In Proceedings of the Energy Procedia; Elsevier 2014, 55, 797–804.Search in Google Scholar
Lee, M.S.; Wu, S.; Jhong, S. Bin; Chen, K.H.; Liu, K.T. Memory and electrical properties of (100)-oriented AlN thin films prepared by radio frequency magnetron sputtering. Journal of Nanomaterials 2014, 2014, 250439, doi:10.1155/2014/250439.Search in Google Scholar
Xie, F.; Gu, Y.; Hu, Z.; Yu, B.; Yang, G. Ultra-low dark current back-illuminated AlGaN-based solar-blind ultraviolet photodetectors with broad spectral response. Optics Express 2022, 30, 23756, doi:10.1364/OE.461169.Search in Google Scholar
Yang, M.; Chong, M.; Zhao, D.; Wang, X.; Su, Y.; Sun, J.; Sun, X. Back-illuminated AlxGa1-xN-based dual-band solar-blind ultraviolet photodetectors. Journal of Semiconductors 2014, 35, 064008, doi:10.1088/1674-4926/35/6/064008.Search in Google Scholar
Haider, S.T.; Shah, M.A.; Lee, D.-G.; Hur, S. A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices. IEEE Access 2023, 11, 58779–58795, doi:10.1109/ACCESS.2023.3276716.Search in Google Scholar
Davis, R.F. III-V Nitrides for Electronic and Optoelectronic Applications. Proceedings IEEE 1991, 79, 702–712, doi:10.1109/5.90133.Search in Google Scholar
Griffin, B.A.; Habermehl, S.D.; Clews, P.J. High Temperature Microelectromechanical Systems Using Piezoelectric Aluminum Nitride. Additional Conferences (Device Packag. HiTEC, HiTEN, CICMT) 2014, 2014, 000040–000046, doi:10.4071/HITEC-TA24.Search in Google Scholar
Kudyakova, V.S.; Shishkin, R.A.; Elagin, A.A.; Baranov, M.V.; Beketov, A.R. Aluminium nitride cubic modifications synthesis methods and its features. Review. Journal of Europenian Ceramics Society 2017, 37, 1143–1156, doi:10.1016/j.jeurceramsoc.2016.11.051.Search in Google Scholar
Iqbal, A.; Mohd-Yasin, F. Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review. Sensors 2018, 18, 1797, doi:10.3390/s18061797.Search in Google Scholar
Aissa, K.A.; Achour, A.; Elmazria, O.; Simon, Q.; Elhosni, M.; Boulet, P.; Robert, S.; Djouadi, M.A. AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering for SAW applications. Journal of Physics D. Applied Physics 2015, 48, 145307, doi:10.1088/0022-3727/48/14/145307.Search in Google Scholar
Hasheminiasari, M.; Lin, J. Seed layer effect on the (0 0 2) texture and piezoelectric properties of pulsed-DC sputtered AlN thin films. Advances in Materials and Processing Technologies 2016, 2, 66–72, doi:10.1080/2374068X.2016.1159027.Search in Google Scholar
Yin, J.; Chen, D.; Yang, H.; Liu, Y.; Talwar, D.N.; He, T.; Ferguson, I.T.; He, K.; Wan, L.; Feng, Z.C. Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC. Journal of Alloys and Compounds 2021, 857, 157487, doi:10.1016/j.jallcom.2020.157487.Search in Google Scholar
Faria, F.A.; Nomoto, K.; Hu, Z.; Rouvimov, S.; Xing, H.; Jena, D. Low temperature AlN growth by MBE and its application in HEMTs. Journal of Crystal Growth 2015, 425, 133–137, doi:10.1016/j.jcrysgro.2015.03.039.Search in Google Scholar
Ristoscu, C.; Ducu, C.; Socol, G.; Craciunoiu, F.; Mihailescu, I.N. Structural and optical characterization of AlN films grown by pulsed laser deposition. In Proceedings of the Applied Surface Science; North-Holland 2005, 248, 411–415.Search in Google Scholar
Hua, T.S.; Zhu, B.; Song, R.G. Characterisation of AlN nano thin films prepared by PLD. Surface Engineering 2020, 36, 55–62, doi:10.1080/02670844.2018.1564476.Search in Google Scholar
Kolaklieva, L.; Chitanov, V.; Szekeres, A.; Antonova, K.; Terziyska, P.; Fogarassy, Z.; Petrik, P.; Mihailescu, I.N.; Duta, L. Pulsed laser deposition of aluminum nitride films: Correlation between mechanical, optical, and structural properties. Coatings 2019, 9, 195, doi:10.3390/COATINGS9030195.Search in Google Scholar
Dhunna, R.; Lal, C.; Sisodia, V.; Avasthi, D.K.; Ganesan, V.; Jain, I.P. Structural and optical properties of AlN/Si system. Materials Science in Semiconductor Processing 2008, 11, 126–130, doi:10.1016/j.mssp.2009.05.003.Search in Google Scholar
Chen, H.Y.; Han, S.; Shih, H.C. The characterization of aluminum nitride thin films prepared by dual ion beam sputtering. Surface and Coatings Technology 2006, 200, 3326–3329, doi:10.1016/j.surfcoat.2005.07.046.Search in Google Scholar
Shahien, M. Reactive Plasma Spray. In Production, Properties, and Applications of High Temperature Coatings; IGI Global 2018; pp. 299–332 ISBN 9781522541950.Search in Google Scholar
Basillais, A.; Benzerga, R.; Sanchez, H.; Lemenn, E.; Boulmer-Leborgne, C.; Perrière, J. Improvement of the PLD process assisted by RF plasma for AlN growth. Applied Physics A Materials Science and Processing 2005, 80, 851–859, doi:10.1007/s00339-003-2325-z.Search in Google Scholar
Li, H.; Lu, X.; Li, X.; Zhang, J.; Hao, Y. High Quality Transferable AlN Thin Film by PLD. Journal of Physics: Conference Series 2017, 864, 012011, doi:10.1088/1742-6596/864/1/012011.Search in Google Scholar
Han, J.; Cui, B.; Xing, Y.; Li, T.; Zhao, J.; Cao, X.; Zhang, Y.; Zhang, B. Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate. Micro and Nano Letters 2020, 15, 556–560, doi:10.1049/mnl.2019.0767.Search in Google Scholar
Jiang, X.; Wu, Y.; Qi, J.; Liu, Y.; Wang, Y.; Gao, J.; Hei, H.; Yu, S. Effect of nitrogen flow ratio on the structure and optical properties of AlN film. Vacuum 2024, 220, 112829, doi:10.1016/j.vacuum.2023.112829.Search in Google Scholar
Meng, W.J. Crystal structure, mechanical properies, thermal properties and refractive index of AlN. In Properties of Group III Nitrides; Edgar, J.H., Ed.; EMIS datareviews series; no. 11; INSPEC, Institution of Electrical Engineers: London, 1994; Vol. 11, pp. 22–34.Search in Google Scholar
Cieniek, B.; Stefaniuk, I.; Virt, I. EMR spectra thin films doped with high concentration of Co and Cr on quartz and sapphire substrates. Acta Physica Polonica A 2017, 132, 30–33, doi:10.12693/APhysPolA.132.30.Search in Google Scholar
Cieniek, B.; Stefaniuk, I.; Virt, I. EPR study of ZnO:Co thin films grown by the PLD method. Nukleonika 2013, 58, 359–363.Search in Google Scholar
Viezbicke, B.D.; Patel, S.; Davis, B.E.; Birnie, D.P. Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system. Phys. Status Solidi B Basic Research 2015, 252, 1700–1710, doi:10.1002/pssb.201552007.Search in Google Scholar
Kar, J.P.; Bose, G.; Tuli, S. Effect of annealing on DC sputtered aluminum nitride films. Surface and Coatings Technology 2005, 198, 64–67, doi:10.1016/j.surfcoat.2004.10.074.Search in Google Scholar
Taha, W.A.; Ahmed, Z.S.; Aljawad, S.M.H. Optical Properties of Annealed Cadmium Sulfide Thin Films Prepared by Chemical Bath Deposition. Iraqi Journal of Applied Physics Letters 2009, 2, 19–22.Search in Google Scholar
Venkataraj, S.; Severin, D.; Drese, R.; Koerfer, F.; Wuttig, M. Structural, optical and mechanical properties of aluminium nitride films prepared by reactive DC magnetron sputtering. Thin Solid Films 2006, 502, 235–239, doi:10.1016/j.tsf.2005.07.281.Search in Google Scholar
Mednikarov, B.; Spasov, G.; Babeva, T. Aluminum nitride layers prepared by DC/RF magnetron sputtering. In Proceedings of the Journal of Optoelectronics and Advanced Materials 2005, 7, 1421–1427.Search in Google Scholar
Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.; Sathe, V.; Ganesan, V. Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films. Journal of Applied Physics 2014, 116, 213502, doi:10.1063/1.4903320.Search in Google Scholar
Swanepoel, R. Determination of the thickness and optical constants of amorphous silicon. Journal of Physics E: Scientifics Instruments 1983, 16, 1214–1222, doi:10.1088/0022-3735/16/12/023.Search in Google Scholar
Giba, A.E.; Pigeat, P.; Bruyère, S.; Easwarakhanthan, T.; Mücklich, F.; Horwat, D. Controlling refractive index in AlN films by texture and crystallinity manipulation. Thin Solid Films 2017, 636, 537–545, doi:10.1016/j.tsf.2017.06.057.Search in Google Scholar
