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Acousto-optic modulation in ion implanted semiconductor plasmas having SDDC


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Fig. 1

Variation of threshold intensity Ith Vs wave number k.
Variation of threshold intensity Ith Vs wave number k.

Fig. 2

Effective susceptibility [χeff.]real with carrier concentration [ in terms of ωp/ω0] when E0 = 5 × 107Vm–1.
Effective susceptibility [χeff.]real with carrier concentration [ in terms of ωp/ω0] when E0 = 5 × 107Vm–1.

Fig. 3

Effective gain [geff.]ao with pump electric fieldE0 at k0 = 5 × 107m–1 and n0 = 1026m–1.
Effective gain [geff.]ao with pump electric fieldE0 at k0 = 5 × 107m–1 and n0 = 1026m–1.

Fig. 4

Effective gain [geff.]ao with wave number k0 at E0 = 5 × 107Vm–1 and n0 = 1026m–1.
Effective gain [geff.]ao with wave number k0 at E0 = 5 × 107Vm–1 and n0 = 1026m–1.
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