Acousto-optic modulation in ion implanted semiconductor plasmas having SDDC
Publié en ligne: 03 oct. 2018
Pages: 303 - 310
Reçu: 24 janv. 2018
Accepté: 22 juin 2018
© 2018 P.S.Malviya et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Fig. 1
Variation of threshold intensity Ith Vs wave number k.Fig. 2
Effective susceptibility [χeff.]real with carrier concentration [ in terms of ωp/ω0] when E0 = 5 × 107Vm–1.Fig. 3
Effective gain [geff.]ao with pump electric fieldE0 at k0 = 5 × 107m–1 and n0 = 1026m–1.Fig. 4
Effective gain [geff.]ao with wave number k0 at E0 = 5 × 107Vm–1 and n0 = 1026m–1.