1. bookVolume 36 (2018): Issue 3 (September 2018)
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Published Online: 02 Nov 2018
Volume & Issue: Volume 36 (2018) - Issue 3 (September 2018)
Page range: 364 - 369
Received: 28 Sep 2016
Accepted: 22 Mar 2018
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.

Keywords

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