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Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
Open Access
Pressure dependence of the band gap energy for the dilute nitride GaN
x
As
1−x
Chuan-Zhen Zhao
Chuan-Zhen Zhao
,
Tong Wei
Tong Wei
,
Xiao-Dong Sun
Xiao-Dong Sun
,
Sha-Sha Wang
Sha-Sha Wang
and
Ke-Qing Lu
Ke-Qing Lu
| Dec 17, 2016
Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
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Published Online:
Dec 17, 2016
Page range:
881 - 885
Received:
May 04, 2016
Accepted:
Sep 25, 2016
DOI:
https://doi.org/10.1515/msp-2016-0110
Keywords
GaNAs
,
band gap energy
,
pressure dependence
,
dilute nitride
© 2016 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Pressure dependence of E+ and E− for the dilute nitride GaNxAs1−x. The experimental data are from the literature [11].