Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties
, , , , , oraz | 20 lis 2012
O artykule
Data publikacji: 20 lis 2012
Zakres stron: 333 - 335
DOI: https://doi.org/10.2478/v10187-012-0049-z
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Jozef Huran
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Albín Valovič
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Michal Kučera
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Angela Kleinová
Polymer Institute, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 84541 Bratislava, Slovakia
Eva Kovačcová
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Pavol Boháček
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia
Mária Sekáčová
Institute of Electrical Engineering, Slovak Academy of Sciences, D´ubravsk´a cesta 9, 841 04 Bratislava, Slovakia