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PATTERNED LASER CRYSTALLIZATION OF a-Si

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22 lip 2009

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Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

Język:
Angielski
Częstotliwość wydawania:
6 razy w roku
Dziedziny czasopisma:
Fizyka, Fizyka techniczna i stosowana