<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>A numerical method for simulation of electron and hole diffusion in silicon in the temperature gradient created by the shock load is developed. To analyze the transfer process, a complete system of electro-thermo-diffusion equations for charge carriers was solved based on the Poisson equation. The numerical solution was obtained using the difference methods developed for semiconductor devices. The comparison of the experimental results with the numerical calculation shows a good correlation, which means that the thermo-diffusion of charge carriers in the shock wave front is the main factor responsible for polarization in the shocked silicon.</p></abstract>

A numerical method for simulation of electron and hole diffusion in silicon in the temperature gradient created by the shock load is developed. To analyze the transfer process, a complete system of electro-thermo-diffusion equations for charge carriers was solved based on the Poisson equation. The numerical solution was obtained using the difference methods developed for semiconductor devices. The comparison of the experimental results with the numerical calculation shows a good correlation, which means that the thermo-diffusion of charge carriers in the shock wave front is the main factor responsible for polarization in the shocked silicon.

Numerical Simulation of Charge Transfer in Shocked Silicon at low Pressure

Institute of Mathematics and Computer Science, University of Latvia, 29 Raiņa Blvd., Rīga, LV-1459, LATVIA

Latvian Journal of Physics and Technical Sciences

{"article-title":"Numerical Simulation of Charge Transfer in Shocked Silicon at low Pressure"}

A numerical method for simulation of electron and hole diffusion in silicon in the temperature gradient created by the shock load is developed. To analyze the...

Numerical Simulation of Charge Transfer in Shocked Silicon at low Pressure

Data publikacji: 23 wrz 2008

Zakres stron: 33 - 46

DOI: https://doi.org/10.2478/v10047-008-0018-2

This content is open access.