<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Physical properties of GexSb20−x
                        Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys are examined theoretically. Lone pair electrons are calculated using an average coordination number (〈r〉) and the number of valence electrons, and are found to decrease with an addition of Ge. Mean bond energy (〈E〉) is proportional to glass transition temperature (Tg) and shows maxima near the chemical threshold. Cohesive energy of the system is calculated using chemical bond approach. A linear relation is found between cohesive energy, band gap (calculated theoretically and confirmed experimentally) and average heat of atomization. All these parameters are increasing with an increase in Ge content. A relation between average single bond energy and photon energy is discussed. Compactness of the structure is measured from the calculated density of the glass. An attempt is made to discuss the results in terms of structure of the glass or equivalently with average coordination number.</p></abstract>

Physical properties of GexSb20−x
                        Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys are examined theoretically. Lone pair electrons are calculated using an average coordination number (〈r〉) and the number of valence electrons, and are found to decrease with an addition of Ge. Mean bond energy (〈E〉) is proportional to glass transition temperature (Tg) and shows maxima near the chemical threshold. Cohesive energy of the system is calculated using chemical bond approach. A linear relation is found between cohesive energy, band gap (calculated theoretically and confirmed experimentally) and average heat of atomization. All these parameters are increasing with an increase in Ge content. A relation between average single bond energy and photon energy is discussed. Compactness of the structure is measured from the calculated density of the glass. An attempt is made to discuss the results in terms of structure of the glass or equivalently with average coordination number.

Theoretical prediction of physical parameters of GexSb20−x
                     Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Department of Physics, AIAS, Amity University, Noida, India

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Physical properties of GexSb20−x
                        Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys are examined theoretically. Lone pair electrons are...

Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Data publikacji: 19 gru 2014

Zakres stron: 661 - 668

DOI: https://doi.org/10.2478/s13536-014-0249-2

Słowa kluczowe
amorphous semiconductors, mean bond energy, glass transition temperature, cohesive energy, theoretical band gap

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Data publikacji: 19 gru 2014

Zakres stron: 661 - 668

DOI: https://doi.org/10.2478/s13536-014-0249-2

Słowa kluczoweamorphous semiconductors, mean bond energy, glass transition temperature, cohesive energy, theoretical band gap

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Słowa kluczowe
amorphous semiconductors, mean bond energy, glass transition temperature, cohesive energy, theoretical band gap