Optimization of deposition temperature of SILAR Cu-rich CuInS2 thin films
oraz | 20 kwi 2013
O artykule
Data publikacji: 20 kwi 2013
Zakres stron: 193 - 200
DOI: https://doi.org/10.2478/s13536-012-0094-0
Słowa kluczowe
© 2013 Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
CuInS2 (CIS) is studied widely as a promising absorber material for high efficient and low cost thin film solar cells. CIS thin films are prepared on soda lime glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at different deposition temperatures (40 to 70 °C). The structural, compositional and optical properties are studied with x-ray diffractometer, energy dispersive x-ray analyzer and spectrophotometer. The influence of the deposition temperature on the properties of CIS thin films is discussed in this paper in detail.