Otwarty dostęp

Effect of evaporation rate and substrate temperature on optical, structural, and electrical properties of ZnTe:Sb films deposited by thermal evaporation of Zn, Te, and Sb sources

,  oraz   
30 cze 2025

Zacytuj
Pobierz okładkę

Singh, H., Singh, P., Thakur, A., Singh, T., Sharma, J., Nanocrystalline ZnxTe100−x (x = 0, 5, 20, 30, 40, 50) thin films: Structural, optical and electrical properties, Mater. Sci. Semicond. Process., 2018, 75: 276–282. 10.1016/j.mssp.2017.12.002 Singh H. Singh P. Thakur A. Singh T. Sharma J. Nanocrystalline ZnxTe100−x (x = 0, 5, 20, 30, 40, 50) thin films: Structural, optical and electrical properties Mater. Sci. Semicond. Process. 2018 75 276 282 10.1016/j.mssp.2017.12.002 Open DOI

Shaaban, E.R., Kansal, I., Mohamed, S.H., Ferreira, J.M.F., Microstructural parameters and optical constants of ZnTe thin films with various thicknesses, Phys. B Condens. Matter, 2009, 404: 3571–3576. 10.1016/J.PHYSB.2009.06.002 Shaaban E.R. Kansal I. Mohamed S.H. Ferreira J.M.F. Microstructural parameters and optical constants of ZnTe thin films with various thicknesses Phys. B Condens. Matter 2009 404 3571 3576 10.1016/J.PHYSB.2009.06.002 Open DOI

Ur Rehman, K.M., Liu, X., Riaz, M., Yang, Y., Feng, S., Khan, M.W., et al., Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates, Phys. B Condens. Matter, 2019, 560: 204–207. 10.1016/j.physb.2019.02.043 Ur Rehman K.M. Liu X. Riaz M. Yang Y. Feng S. Khan M.W. Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates Phys. B Condens. Matter 2019 560 204 207 10.1016/j.physb.2019.02.043 Open DOI

Abbas Shah, N., Silver doping effects on ZnTe thin films by thermal evaporation technique, J. Mater. Sci. Eng., 2017, 6: 388. 10.4172/2169-0022.1000388 Abbas Shah N. Silver doping effects on ZnTe thin films by thermal evaporation technique J. Mater. Sci. Eng. 2017 6 388 10.4172/2169-0022.1000388 Open DOI

Li, H., Huang, H., Lina, A., Tang, K., Chen, Z., Zhang, Z., et al., Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method, Heliyon, 2024, 10: e23349. 10.1016/j.heliyon.2023.e23349 Li H. Huang H. Lina A. Tang K. Chen Z. Zhang Z. Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method Heliyon 2024 10 e23349 10.1016/j.heliyon.2023.e23349 Open DOI

Abbas, M., Shah, N.A., Jehangir, K., Fareed, M., Zaidi, A., Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system, Mater Sci- Pol, 2018, 36: 364–369. 10.1515/msp-2018-0036 Abbas M. Shah N.A. Jehangir K. Fareed M. Zaidi A. Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system Mater Sci- Pol 2018 36 364 369 10.1515/msp-2018-0036 Open DOI

Ochoa-Estrella, F.J., Vera-Marquina, A., Mejia, I., Leal-Cruz, A.L., Quevedo-López, M., Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD, J. Mater. Sci. Mater. Electron., 2018, 29: 7629–7636. 10.1007/S10854-018-8755-3/METRICS Ochoa-Estrella F.J. Vera-Marquina A. Mejia I. Leal-Cruz A.L. Quevedo-López M. Pressure influence on structural and optical behaviors of ZnTe thin films grown by PLD J. Mater. Sci. Mater. Electron. 2018 29 7629 7636 10.1007/S10854-018-8755-3/METRICS Open DOI

Kumar, V., Kumar, V., Dwivedi, D.K., Growth and characterization of zinc telluride thin films for photovoltaic applications, Phys. Scr., 2012, 86: 015604. 10.1088/0031-8949/86/01/015604 Kumar V. Kumar V. Dwivedi D.K. Growth and characterization of zinc telluride thin films for photovoltaic applications Phys. Scr. 2012 86 015604 10.1088/0031-8949/86/01/015604 Open DOI

Mahmood, W., Awan, S.U., Din, A.U., Ali, J., Nasir, M.F., Ali, N., et al., Pronounced impact of p-type carriers and reduction of bandgap in semiconducting ZnTe thin films by Cu doping for intermediate buffer layer in heterojunction solar cells, Materials, 2019, 12: 1359. 10.3390/MA12081359 Mahmood W. Awan S.U. Din A.U. Ali J. Nasir M.F. Ali N. Pronounced impact of p-type carriers and reduction of bandgap in semiconducting ZnTe thin films by Cu doping for intermediate buffer layer in heterojunction solar cells Materials 2019 12 1359 10.3390/MA12081359 Open DOI

Islam, A.B.M.O., Chaure, N.B., Wellings, J., Tolan, G., Dharmadasa, I.M., Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells, Mater. Charact., 2009, 60: 160–163. 10.1016/J.MATCHAR.2008.07.009 Islam A.B.M.O. Chaure N.B. Wellings J. Tolan G. Dharmadasa I.M. Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells Mater. Charact. 2009 60 160 163 10.1016/J.MATCHAR.2008.07.009 Open DOI

Murali, K.R., Ziaudeen, M., Jayaprakash, N., Structural and electrical properties of brush plated ZnTe films, Solid. State Electron., 2006, 50: 1692–1695. 10.1016/J.SSE.2006.09.003 Murali K.R. Ziaudeen M. Jayaprakash N. Structural and electrical properties of brush plated ZnTe films Solid. State Electron. 2006 50 1692 1695 10.1016/J.SSE.2006.09.003 Open DOI

Hassan, A.M., Diab, F., Kotp, E.F., Al-Kashef, G., Shaaban, E.R., Metawa, A.E., Implantation of Cu onto ZnTe thin film using plasma focus device for optoelectronic applications, Opt. Mater. (Amst.), 2021, 117, 111182. 10.1016/J.OPTMAT.2021.111182 Hassan A.M. Diab F. Kotp E.F. Al-Kashef G. Shaaban E.R. Metawa A.E. Implantation of Cu onto ZnTe thin film using plasma focus device for optoelectronic applications Opt. Mater. (Amst.) 2021 117 111182 10.1016/J.OPTMAT.2021.111182 Open DOI

Singh, H., Singh, M., Singh, J., Bansod, B.S., Singh, T., Thakur, A., et al., Composition dependence study of thermally evaporated nanocrystalline ZnTe thin films. J. Mater. Sci. Mater. Electron., 2019, 30: 3504–3510. 10.1007/S10854-018-00627-9/METRICS Singh H. Singh M. Singh J. Bansod B.S. Singh T. Thakur A. Composition dependence study of thermally evaporated nanocrystalline ZnTe thin films J. Mater. Sci. Mater. Electron. 2019 30 3504 3510 10.1007/S10854-018-00627-9/METRICS Open DOI

Bhahada, K.C., Tripathi, B., Acharya, N.K., Kulriya, P.K., Vijay, Y.K., Formation of ZnTe by stacked elemental layer method, Appl. Surf. Sci., 2008, 255: 2143–2148. 10.1016/J.APSUSC.2008.07.068 Bhahada K.C. Tripathi B. Acharya N.K. Kulriya P.K. Vijay Y.K. Formation of ZnTe by stacked elemental layer method Appl. Surf. Sci. 2008 255 2143 2148 10.1016/J.APSUSC.2008.07.068 Open DOI

Younus, I.A., Ezzat, A.M., Uonis, M.M., Preparation of ZnTe thin films using chemical bath deposition technique, Nanocomposites, 2020, 6: 165–172. 10.1080/20550324.2020.1865712 Younus I.A. Ezzat A.M. Uonis M.M. Preparation of ZnTe thin films using chemical bath deposition technique Nanocomposites 2020 6 165 172 10.1080/20550324.2020.1865712 Open DOI

Aqili, A.K.S., Saleh, A.J., Ali, Z., Al-Omari, S., Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process, J. Alloys Compd., 2012, 520: 83. 10.1016/j.jallcom.2011.12.094 Aqili A.K.S. Saleh A.J. Ali Z. Al-Omari S. Ag doped ZnTe films prepared by closed space sublimation and an ion exchange process J. Alloys Compd. 2012 520 83 10.1016/j.jallcom.2011.12.094 Open DOI

Aqili, A.K.S., Ali, Z., Maqsood, A., Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient, J. Cryst. Growth, 2011, 317: 47–51. 10.1016/j.jcrysgro.2010.12.072 Aqili A.K.S. Ali Z. Maqsood A. Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient J. Cryst. Growth 2011 317 47 51 10.1016/j.jcrysgro.2010.12.072 Open DOI

Ochoa-Estrella, F.J., Vera-Marquina, A., Mejia, I., Leal-Cruz, A.L., Pintor-Monroy, M.I., Quevedo-López, M., Structural, optical, and electrical properties of ZnTe:Cu thin films by PLD, J. Mater. Sci. Mater. Electron., 2018, 29: 20623–20628. 10.1007/S10854-018-0200-0/METRICS Ochoa-Estrella F.J. Vera-Marquina A. Mejia I. Leal-Cruz A.L. Pintor-Monroy M.I. Quevedo-López M. Structural, optical, and electrical properties of ZnTe:Cu thin films by PLD J. Mater. Sci. Mater. Electron. 2018 29 20623 20628 10.1007/S10854-018-0200-0/METRICS Open DOI

Romeo, N., Sberveglieri, G., Tarricone, L., Vidal, J., Wojtowicz, A., Electrical properties of Sb-doped ZnTe thin films, Phys. Status Solidi (a), 1978, 47: 371–374. 10.1002/PSSA.2210470205 Romeo N. Sberveglieri G. Tarricone L. Vidal J. Wojtowicz A. Electrical properties of Sb-doped ZnTe thin films Phys. Status Solidi (a) 1978 47 371 374 10.1002/PSSA.2210470205 Open DOI

Lee, K.S., Oh, G., Kim, E.K., Growth of p-type ZnTe thin films by using nitrogen doping during pulsed laser deposition, J. Korean Phys. Soc., 2015, 67: 672–675. 10.3938/JKPS.67.672/METRICS Lee K.S. Oh G. Kim E.K. Growth of p-type ZnTe thin films by using nitrogen doping during pulsed laser deposition J. Korean Phys. Soc. 2015 67 672 675 10.3938/JKPS.67.672/METRICS Open DOI

Oklobia, O., Kartopu, G., Irvine, S.J.C., Properties of arsenic–doped ZnTe thin films as a back contact for CdTe solar cells, Materials, 2019, 12: 3706. 10.3390/MA12223706 Oklobia O. Kartopu G. Irvine S.J.C. Properties of arsenic–doped ZnTe thin films as a back contact for CdTe solar cells Materials 2019 12 3706 10.3390/MA12223706 Open DOI

Barati, A., Klein, A., Jaegermann, W., Deposition and characterization of highly p-type antimony doped ZnTe thin films, Thin Solid. Films, 2009, 517: 2149–2152. 10.1016/J.TSF.2008.10.078 Barati A. Klein A. Jaegermann W. Deposition and characterization of highly p-type antimony doped ZnTe thin films Thin Solid. Films 2009 517 2149 2152 10.1016/J.TSF.2008.10.078 Open DOI

Amutha, R., Subbarayan, A., Sathyamoorthy, R., Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films, Cryst. Res. Technol., 2006, 41: 1174–1179. 10.1002/CRAT.200610744 Amutha R. Subbarayan A. Sathyamoorthy R. Influence of substrate temperature on microcrystalline structure and optical properties of ZnTe thin films Cryst. Res. Technol. 2006 41 1174 1179 10.1002/CRAT.200610744 Open DOI

Mahmood, W., Thomas, A., Haq, A.U., Shah, N.A., Nasir, M.F., Reduced electrical performance of Zn enriched Zn Ten anoinclusion semiconductors thin films for buffer layer in solar cells, J. Phys. D. Appl. Phys., 2017, 50: 255503. 10.1088/1361-6463/AA7157 Mahmood W. Thomas A. Haq A.U. Shah N.A. Nasir M.F. Reduced electrical performance of Zn enriched Zn Ten anoinclusion semiconductors thin films for buffer layer in solar cells J. Phys. D. Appl. Phys. 2017 50 255503 10.1088/1361-6463/AA7157 Open DOI

Webb, J.B., Brodie, D.E., Conduction mechanisms in a-ZnTe, Can. J. Phys., 2011, 52, 2240–2245. 10.1139/P74-294 Webb J.B. Brodie D.E. Conduction mechanisms in a-ZnTe Can. J. Phys. 2011 52 2240 2245 10.1139/P74-294 Open DOI

Aqili, A.K., Abu-Omar, T., Al-Reyahi, A.Y., Shaheen, A., Al-Omari, S., Alhagish, I., Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films, Chalcogenide Lett., 2023, 20: 113–120. 10.15251/CL.2023.202.113 Aqili A.K. Abu-Omar T. Al-Reyahi A.Y. Shaheen A. Al-Omari S. Alhagish I. Effect of phosphoric acid treatment on the physical properties of zinc telluride thin films Chalcogenide Lett. 2023 20 113 120 10.15251/CL.2023.202.113 Open DOI

Walton, A.K., Moss, T.S., Determination of refractive index and correction to effective electron mass in PbTe and PbSe, Proc. Phys. Soc., 1963, 81: 509. 10.1088/0370-1328/81/3/319 Walton A.K. Moss T.S. Determination of refractive index and correction to effective electron mass in PbTe and PbSe Proc. Phys. Soc. 1963 81 509 10.1088/0370-1328/81/3/319 Open DOI

Ahmed, M., Alshahrie, A., Shaaban, E.R., Resulting effect of the p-Type of ZnTe: Cu thin films of the intermediate layer in heterojunction solar cells: Structural, optical, and electrical characteristics, Materials, 2023, 16: 3082. 10.3390/MA16083082 Ahmed M. Alshahrie A. Shaaban E.R. Resulting effect of the p-Type of ZnTe: Cu thin films of the intermediate layer in heterojunction solar cells: Structural, optical, and electrical characteristics Materials 2023 16 3082 10.3390/MA16083082 Open DOI