Otwarty dostęp

Structural, morphological, and optical properties of AgxO thin films deposited via obliquely angle deposition

H. Ben Soltane

H. Ben Soltane

  • Université Tunis El Manar, Ecole Nationale d’Ingénieurs de Tunis, Laboratoire de Photovoltaïque et Matériaux SemiconducteursTunis, Tunisia
  • Ecole Nationale Supérieure d’Ingénieurs de Tunis, Université de TunisTunis, Tunisia
Wyszukaj tego autora
Sciendo|Google Scholar
Soltane, H. Ben
, 
F. Chaffar Akkari

F. Chaffar Akkari

Université Tunis El Manar, Ecole Nationale d’Ingénieurs de Tunis, Laboratoire de Photovoltaïque et Matériaux SemiconducteursTunis, Tunisia
Wyszukaj tego autora
Sciendo|Google Scholar
Akkari, F. Chaffar
, 
B. Gallas

B. Gallas

Sorbonne Université, CNRS, Institut des Nanosciences de Paris – UMR 7588Campus Pierre et Marie CurieParis, France
Wyszukaj tego autora
Sciendo|Google Scholar
Gallas, B.
 oraz 
M. Kanzari

M. Kanzari

  • Université Tunis El Manar, Ecole Nationale d’Ingénieurs de Tunis, Laboratoire de Photovoltaïque et Matériaux SemiconducteursTunis, Tunisia
  • Université de Tunis, Institut Préparatoire aux Etudes d’Ingénieurs de Tunis-IPEITMontfleury, Tunisia
Wyszukaj tego autora
Sciendo|Google Scholar
Kanzari, M.
  
12 cze 2023
Structural, morphological, and optical properties of AgxO thin films deposited via obliquely angle deposition's Cover Image
O artykule
Poprzedni artykuł
Następny artykuł
Zacytuj
Pobierz okładkę
Data publikacji: 12 cze 2023
Zakres stron: 27 - 41
Otrzymano: 17 paź 2022
Przyjęty: 31 sty 2023
DOI: https://doi.org/10.2478/msp-2023-0002
Słowa kluczowe
© 2023 H. Ben Soltane et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1.

(A) The schematic diagram of the GLAD technique, and (B) diagram of the self-shadowing effect during the growth of the layer. GLAD, glancing angle deposition
(A) The schematic diagram of the GLAD technique, and (B) diagram of the self-shadowing effect during the growth of the layer. GLAD, glancing angle deposition

Fig. 2.

(A) XRD patterns of AgxO thin films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85°annealed at 300°C, and (B) XRD patterns of AgxO thin films in the Bragg angles range 35°–40°. XRD, X-ray diffraction
(A) XRD patterns of AgxO thin films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85°annealed at 300°C, and (B) XRD patterns of AgxO thin films in the Bragg angles range 35°–40°. XRD, X-ray diffraction

Fig. 3.

(A) XRD patterns of AgxO thin films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85°annealed at 400°C, and (B) XRD patterns of AgxO thin films in the Bragg angles range 35°–40°. XRD, X-ray diffraction
(A) XRD patterns of AgxO thin films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85°annealed at 400°C, and (B) XRD patterns of AgxO thin films in the Bragg angles range 35°–40°. XRD, X-ray diffraction

Fig. 4.

Surface morphology of silver thin film before annealing for the incident angle γ=0°
Surface morphology of silver thin film before annealing for the incident angle γ=0°

Fig. 5.

Surface morphologies of silver oxide thin films after annealing at 300°C for the incident angles a=(γ=0°), b= (γ=40°), c=(γ=60°), d=(γ=75°), and e=(γ=85°)
Surface morphologies of silver oxide thin films after annealing at 300°C for the incident angles a=(γ=0°), b= (γ=40°), c=(γ=60°), d=(γ=75°), and e=(γ=85°)

Fig. 6.

Surface morphologies of silver oxide thin films after annealing at 400°C for the incident angles a=(γ=0°), b= (γ=40°), c=(γ=60°), d=(γ=75°), and e=(γ=85°)
Surface morphologies of silver oxide thin films after annealing at 400°C for the incident angles a=(γ=0°), b= (γ=40°), c=(γ=60°), d=(γ=75°), and e=(γ=85°)

Fig. 7.

Cross-section of AgxO thin films deposited at incident angles(A)γ= 60°, (B)γ=75°, and (C)γ=85°
Cross-section of AgxO thin films deposited at incident angles(A)γ= 60°, (B)γ=75°, and (C)γ=85°

Fig. 8.

(A) Transmittance spectra and (B) reflectance spectra of AgxO films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85° for the annealing temperature in free air of 300°C, for silver thin films
(A) Transmittance spectra and (B) reflectance spectra of AgxO films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85° for the annealing temperature in free air of 300°C, for silver thin films

Fig. 9.

(A) Transmittance spectra and (B) reflectance spectra of AgxO films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85° for the annealing temperature in free air of 400°C, for silver thin films
(A) Transmittance spectra and (B) reflectance spectra of AgxO films deposited, respectively, at γ=0°, 20°, 40°, 60°, 75°, and 85° for the annealing temperature in free air of 400°C, for silver thin films

Fig. 10.

Plot of average reflection for AgxO thin films deposited at different deposition angles (γ=0°, 20°, 40°, 60°, 75°, and 85°) annealed at 300°C and 400°C
Plot of average reflection for AgxO thin films deposited at different deposition angles (γ=0°, 20°, 40°, 60°, 75°, and 85°) annealed at 300°C and 400°C

Fig. 11.

The variation of the thickness for the incident angles γ= 40°, 60°, 75°, and 85°for the annealing temperatures (A) 300°C and (B) 400°C
The variation of the thickness for the incident angles γ= 40°, 60°, 75°, and 85°for the annealing temperatures (A) 300°C and (B) 400°C

Fig. 12.

Extinction coefficient spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C
Extinction coefficient spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C

Fig. 13.

Refractive index spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C
Refractive index spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C

Fig. 14.

Δn spectra of films deposited at incident angles γ=40 , 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C
Δn spectra of films deposited at incident angles γ=40 , 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C

Fig. 15.

The variation of the plane birefringence Δn for AgxO thin films deposited at different deposition angles (γ=0°, 20°, 40°, 60°, 75°, and 85°) for the annealing temperature in free air 300°C, for silver thin films
The variation of the plane birefringence Δn for AgxO thin films deposited at different deposition angles (γ=0°, 20°, 40°, 60°, 75°, and 85°) for the annealing temperature in free air 300°C, for silver thin films

Fig. 16.

Absorption coefficient spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C
Absorption coefficient spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C

Fig. 17.

Direct band gap energy spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C
Direct band gap energy spectra of films deposited at incident angles γ=40°, 60°, 75°, and 85°annealed in free air at (A) 300°C and (B) 400°C

Different phases, Bragg angles, and reticular planes (hkl) of the samples for the incident angles γ=0°, 20°, 40°, 60°, 75°, and 85°and the incident angles γ=0°, 20°, 40°, and 60° for the annealing temperatures 300°C and 400°C, respectively

Annealing temperature (°C) Deposition angle γ (°) Bragg angle 2θ(°) Phases (hkl)
300 00 38.1 Ag (111)
20 44.3 Ag (200)
40 38.1 Ag (111)
60 38.2 Ag2O (200)
75 44.3 Ag (200)
85 32.2 Ag2O (111)
38.1 Ag (111)
38.2 Ag2O (200)
44.3 Ag (200)
32.2 Ag2O (111)
38.1 Ag (111)
38.2 Ag2O (200)
44.3 Ag (200)
32.2 Ag2O (111)
38.2 Ag2O (200)
44.4 Ag (200)
32.2 Ag2O (111)
38.2 Ag2O (200)
400 00 38.1 Ag (111)
20 44.4 Ag (200)
40 38.1 Ag (111)
60 38.2 Ag2O (200)
44.3 Ag (200)
38.1 Ag (111)
38.2 Ag2O (200)
44.3 Ag (200)
38.1 Ag (111)
38.2 Ag2O (200)
44.3 Ag (200)

Structural data of nanocolumnar silver oxide thin films for the incident angles γ=0°, 20°, 40°, 60°, 75°, and 85°, and with the annealing temperature at 300°C and 400°C

Annealing temperature (°C) Deposition angleγ(°) Crystallite size (nm) Strain ε (×10−3) Dislocation density (δ)(×10−3) (nm−2)
300 00 36 2.95 0.77
20 55 1.92 0.33
40 51 2.09 0.38
60 54 1.95 0.34
75 26 3.97 1.47
85 27 3.90 1.37
400 00 37 2.81 0.73
20 57 1.96 0.30
40 51 2.09 0.38
60 55 1.97 0.32
75 – – –
85 – – –
Język:
Angielski
Częstotliwość wydawania:
4 razy w roku
Dziedziny czasopisma:
Nauka o materiałach, Nauka o materiałach, inne, Nanomateriały, Funkcjonalne i inteligentne materiały, Charakterystyka i właściwości materiałów
Kanał RSS czasopisma