<abstract xmlns="http://www.w3.org/1999/xhtml">In this report, ternary semiconducting NixBi2−xS3(x = 0.2 M and 0.5 M) thin films were synthesized <italic>in situ</italic> for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of NixBi2−xS3 films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni2+ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of NixBi2−xS3 formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap Eg of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.</abstract>

In this report, ternary semiconducting NixBi2−xS3(x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of NixBi2−xS3 films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni2+ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of NixBi2−xS3 formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap Eg of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NixBi2−xS3) thin films

Department of Physics, Government College of Technology

Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NiBiS) thin films

In this report, ternary semiconducting NixBi2−xS3(x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition...

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (Ni_xBi_2−xS₃) thin films

Data publikacji: 01 lut 2019

Zakres stron: 675 - 684

Otrzymano: 16 lis 2017

Przyjęty: 13 lip 2018

DOI: https://doi.org/10.2478/msp-2018-0072

Słowa kluczowe
chemical bath deposition, X-ray, photoluminescence, ternary compounds, activation energy, sensor

© 2018 Sabarish R. et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NixBi2−xS3) thin films

Data publikacji: 01 lut 2019

Zakres stron: 675 - 684

Otrzymano: 16 lis 2017

Przyjęty: 13 lip 2018

DOI: https://doi.org/10.2478/msp-2018-0072

Słowa kluczowechemical bath deposition, X-ray, photoluminescence, ternary compounds, activation energy, sensor

© 2018 Sabarish R. et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Influence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (Ni_xBi_2−xS₃) thin films

Słowa kluczowe
chemical bath deposition, X-ray, photoluminescence, ternary compounds, activation energy, sensor