<abstract xmlns="http://www.w3.org/1999/xhtml">We have studied luminescence of LiGaO2, Al2O3-Ga and Al2O3-Li crystals in order to reveal the nature of luminescence centres and mechanisms in these crystals. In Al2O3-Ga presence of Ga impurities determines occurrence of the 280 nm emission band, which demonstrates intra-centre character in photoluminescence and recombination character under X-ray irradiation. In Al2O3-Li crystal lithium induced luminescence is presented with the 326 nm band, which has a recombination character. Basing on spectral similarity of the main luminescence bands in pure LiGaO2 crystal with the dopant-induced emission bands in Al2O3, and on peculiarities of the X-ray induced thermoluminescence, the adjustment of the previous luminescence interpretation is done. It is proposed that the donor-acceptor pairs with random separation distribution responsible for the 280 nm emission are represented with gallium Ga (plus an electron) and O (plus a hole) pairs, while the donor-acceptor pairs, producing the 330 nm emission band contain a lithium ion, presumably in the interstitial position Lii0, and a neighbouring oxygen ion with a caught hole.</abstract>

We have studied luminescence of LiGaO2, Al2O3-Ga and Al2O3-Li crystals in order to reveal the nature of luminescence centres and mechanisms in these crystals. In Al2O3-Ga presence of Ga impurities determines occurrence of the 280 nm emission band, which demonstrates intra-centre character in photoluminescence and recombination character under X-ray irradiation. In Al2O3-Li crystal lithium induced luminescence is presented with the 326 nm band, which has a recombination character. Basing on spectral similarity of the main luminescence bands in pure LiGaO2 crystal with the dopant-induced emission bands in Al2O3, and on peculiarities of the X-ray induced thermoluminescence, the adjustment of the previous luminescence interpretation is done. It is proposed that the donor-acceptor pairs with random separation distribution responsible for the 280 nm emission are represented with gallium Ga (plus an electron) and O (plus a hole) pairs, while the donor-acceptor pairs, producing the 330 nm emission band contain a lithium ion, presumably in the interstitial position Lii0, and a neighbouring oxygen ion with a caught hole.

Comparison of Luminescence in LiGaO2, Al2O3-Ga and Al2O3-Li Crystals

Latvian Journal of Physics and Technical Sciences

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Comparison of Luminescence in LiGaO, AlO-Ga and AlO-Li Crystals

We have studied luminescence of LiGaO2, Al2O3-Ga and Al2O3-Li crystals in order to reveal the nature of luminescence centres and mechanisms in these crystals....

Comparison of Luminescence in LiGaO₂, Al₂O₃-Ga and Al₂O₃-Li Crystals

Data publikacji: 25 sty 2019

Zakres stron: 4 - 12

DOI: https://doi.org/10.2478/lpts-2018-0038

Słowa kluczowe
alumina, donor-acceptor pairs, exciton, lithium metagallate, luminescence

© 2018 L. Trinkler et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Comparison of Luminescence in LiGaO2, Al2O3-Ga and Al2O3-Li Crystals

Data publikacji: 25 sty 2019

Zakres stron: 4 - 12

DOI: https://doi.org/10.2478/lpts-2018-0038

Słowa kluczowealumina, donor-acceptor pairs, exciton, lithium metagallate, luminescence

© 2018 L. Trinkler et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Comparison of Luminescence in LiGaO₂, Al₂O₃-Ga and Al₂O₃-Li Crystals

Słowa kluczowe
alumina, donor-acceptor pairs, exciton, lithium metagallate, luminescence