<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.</p></abstract>

Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.

Graphene prepared on SiC by chemical vapor deposition process at low temperature

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Graphene prepared on SiC by chemical vapor deposition process at low temperature"}

Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 °C) and with use of...

Graphene prepared on SiC by chemical vapor deposition process at low temperature

Data publikacji: 21 paź 2019

Zakres stron: 329 - 331

Otrzymano: 06 cze 2019

DOI: https://doi.org/10.2478/jee-2019-0064

Słowa kluczowe
graphene, CVD process, SiC

© 2019 Petr Machac, published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Graphene prepared on SiC by chemical vapor deposition process at low temperature

Data publikacji: 21 paź 2019

Zakres stron: 329 - 331

Otrzymano: 06 cze 2019

DOI: https://doi.org/10.2478/jee-2019-0064

Słowa kluczowegraphene, CVD process, SiC

© 2019 Petr Machac, published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Słowa kluczowe
graphene, CVD process, SiC